Shenzhen Koben Electronics Co., Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 10000 pieces per year |
| Delivery Time | 1-2 working days |
| Packaging Details | factory standard packing |
| Condition | 100% Brand New Product |
| Part Status | Active |
| Package | H2S |
| Lead Free Status / RoHS Status | Compliant |
| Output Power | 30W |
| Voltage | 12.5V |
| Brand Name | Mitsubishi |
| Model Number | RA30H1317M |
| Certification | IEC |
| Place of Origin | JP |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000 pieces per year |
| Delivery Time | 1-2 working days | Packaging Details | factory standard packing |
| Condition | 100% Brand New Product | Part Status | Active |
| Package | H2S | Lead Free Status / RoHS Status | Compliant |
| Output Power | 30W | Voltage | 12.5V |
| Brand Name | Mitsubishi | Model Number | RA30H1317M |
| Certification | IEC | Place of Origin | JP |
| High Light | high power mosfet transistors ，n channel mosfet transistor | ||
RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V
DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
1, Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=12.5V, VGG=0V) • Pout>30W, hT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
2, Broadband Frequency Range: 135-175MHz
3, Low-Power Control Current IGG=1mA (typ) at VGG=5V
4, Module Size: 66 x 21 x 9.88 mm
5, Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
1995
Ecer Certification：
Site Member
Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc... Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...
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