Shenzhen Koben Electronics Co., Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 10000 pieces per year |
| Delivery Time | 1-2 working days |
| Packaging Details | factory standard packing |
| Condition | 100% Brand New Product |
| Part Status | Active |
| Package | H2M |
| Lead Free Status / RoHS Status | Compliant |
| Output Power | 45W |
| Voltage | 12.8V |
| Brand Name | Mitsubishi |
| Model Number | RA45H8994M1-101 |
| Certification | IEC |
| Place of Origin | JP |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 10000 pieces per year |
| Delivery Time | 1-2 working days | Packaging Details | factory standard packing |
| Condition | 100% Brand New Product | Part Status | Active |
| Package | H2M | Lead Free Status / RoHS Status | Compliant |
| Output Power | 45W | Voltage | 12.8V |
| Brand Name | Mitsubishi | Model Number | RA45H8994M1-101 |
| Certification | IEC | Place of Origin | JP |
| High Light | high power mosfet transistors ，n channel transistor | ||
RA45H8994M1-101 896-941MHz 45W 12.8V, 2 Stage Amp. RF transistor For MOBILE RADIO
DESCRIPTION
The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power.
FEATURES
1, Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=VGG2=0V)
2, Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
3, Broadband Frequency Range: 896-941MHz • Metal cap structure that makes the improvements of RF radiation simple
4, Low-Power Control Current IGG1+IGG2=0.4mA(typ) @ VGG1=3.4V, VGG2=5V • Module Size: 67 x 18 x 9.9 mm
5, Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
1995
Ecer Certification：
Site Member
Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc... Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstoc...
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