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China factory - Anterwell Technology Ltd.

Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
China IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

  1. China IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

  1. MOQ: 10
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 2500
Delivery Time Stock Offer
Packaging Details please contact me for details
Drain-source voltage 600V
Drain-gate voltage 600V
Main Line IC components, Transistor, Diode, Module,Capacitor etc
Temperature -50~150 °C
Package TO-220
Brand Name ANTERWELL
Model Number 2SK3797
Certification Original Factory Pack
Place of Origin Malaysia

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 2500
Delivery Time Stock Offer Packaging Details please contact me for details
Drain-source voltage 600V Drain-gate voltage 600V
Main Line IC components, Transistor, Diode, Module,Capacitor etc Temperature -50~150 °C
Package TO-220 Brand Name ANTERWELL
Model Number 2SK3797 Certification Original Factory Pack
Place of Origin Malaysia
High Light npn smd transistormulti emitter transistor

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

 

 

 

2SK3797 Field Effect Transistor Silicon N-Channel MOS Type  

 

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Maximum Ratings (Ta = 25°C)

 

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V

Drain current                DC

                                  Pulse (t = 1 ms)

ID 13 A
IDP 52
Drain power dissipation (Tc = 25°C) PD 50 W
Single pulse avalanche energy EAS 1033 mJ
Avalanche current AR 13 A
Repetitive avalanche energy EAR 5.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -50-150     °C

 

Thermal Characteristics

Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.5 w/ °C
Thermal resistance, channel to abinent Rth (ch-a) 62.5 w/ °C

 

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

 

 

 

 

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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