Anterwell Technology Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 8200pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| Drain-source voltage | 500 V |
| Drain-gate voltage (RGS = 20 kΩ) | 500 V |
| Gate-source voltage | ±30 V |
| Drain power dissipation (Tc = 25°C) | 40 W |
| Avalanche current | 8 A |
| Storage temperature range | -55~150 °C |
| Brand Name | Anterwell |
| Model Number | 2SK3561 |
| Certification | new & original |
| Place of Origin | original factory |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8200pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| Drain-source voltage | 500 V | Drain-gate voltage (RGS = 20 kΩ) | 500 V |
| Gate-source voltage | ±30 V | Drain power dissipation (Tc = 25°C) | 40 W |
| Avalanche current | 8 A | Storage temperature range | -55~150 °C |
| Brand Name | Anterwell | Model Number | 2SK3561 |
| Certification | new & original | Place of Origin | original factory |
| High Light | npn smd transistor ，silicon power transistors | ||
N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
| Drain-source voltage | VDSS | 500 | V | |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 500 | V | |
| Gate-source voltage | VGSS | ±30 | V | |
| Drain current | DC (Note 1) | ID | 8 | A |
| Pulse (t = 1 ms) (Note 1) | IDP | 32 | A | |
| Drain power dissipation (Tc = 25°C) | PD | 40 | W | |
| Single pulse avalanche energy (Note 2) | EAS | 312 | mJ | |
| Avalanche current | IAR | 8 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 4 | mJ | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | -55~150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
| Characteristics | Symbol | Max | Unit |
| Thermal resistance, channel to case | Rth (ch-c) | 3.125 | °C/W |
| Thermal resistance, channel to ambient | Rth (ch-a) | 62.5 | °C/W |
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Weight : 1.7 g (typ.)
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification：
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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