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Anterwell Technology Ltd.

  • China,Shenzhen ,Guangdong
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China MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect
China MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect

  1. China MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect

MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect

  1. MOQ: 10pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 8600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1MW) 60 V
Gate-Source Voltage ± 20 V
Drain Current - Continuous 500 mA
Operating and Storage Temperature Range -55 to 150 °C
Brand Name Anterwell
Model Number MMBF170
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 8600pcs
Delivery Time 1 day Packaging Details Please contact me for details
Drain-Source Voltage 60 V Drain-Gate Voltage (RGS < 1MW) 60 V
Gate-Source Voltage ± 20 V Drain Current - Continuous 500 mA
Operating and Storage Temperature Range -55 to 150 °C Brand Name Anterwell
Model Number MMBF170 Certification new & original
Place of Origin original factory
High Light power mosfet icsilicon power transistors

 

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

 

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter BS170 MMBF170 Unit
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MW) 60 V
VGSS Gate-Source Voltage ± 20 V
ID

Drain Current - Continuous

                      - Pulsed

500 500 mA
1200 800 mA
PD

Maximum Power Dissipation

Derate Above 25°C

830 300 mW
6.6 2.4 mW/°C
TJ ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 °C
  THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W

 

               

                 Switching Test Circuit.                                   Switching Waveforms.

 

 

 

 

 

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2004

  • Total Annual:

    500000-1000000

  • Employee Number:

    20~30

  • Ecer Certification:

    Site Member

           King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...            King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...

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  • Anterwell Technology Ltd.
  • Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
  • https://www.circuitboardchips.com/

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