Anterwell Technology Ltd.
| Payment Terms | T/T, Western Union, Paypal |
| Supply Ability | 8500pcs |
| Delivery Time | 1 day |
| Packaging Details | Please contact me for details |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Gate Voltage | 100 V |
| Continuous Drain Current | 1.3 A |
| Pulsed Drain Current | 5.2 A |
| Maximum Power Dissipation | 1.0 W |
| Operating and Storage Temperature | -55 to 150 ℃ |
| Brand Name | Anterwell |
| Model Number | IRFD120 |
| Certification | new & original |
| Place of Origin | original factory |
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Product Specification
| Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8500pcs |
| Delivery Time | 1 day | Packaging Details | Please contact me for details |
| Drain to Source Breakdown Voltage | 100 V | Drain to Gate Voltage | 100 V |
| Continuous Drain Current | 1.3 A | Pulsed Drain Current | 5.2 A |
| Maximum Power Dissipation | 1.0 W | Operating and Storage Temperature | -55 to 150 ℃ |
| Brand Name | Anterwell | Model Number | IRFD120 |
| Certification | new & original | Place of Origin | original factory |
| High Light | power mosfet ic ，silicon power transistors | ||
IRFD120
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17401.
Features
• 1.3A, 100V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified
| PARAMETER | SYMBOL | IRFD120 | UNITS |
|---|---|---|---|
| Drain to Source Breakdown Voltage (Note 1) | VDS | 100 | V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) | VDGR | 100 | V |
| Continuous Drain Current | ID | 1.3 | A |
| Pulsed Drain Current | IDM | 5.2 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation | PD | 1.0 | W |
| Linear Derating Factor (See Figure 1) | 0.008 | W/℃ | |
| Single Pulse Avalanche Energy Rating (Note 3) | EAS | 36 | mJ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | ℃ |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
℃ ℃ |
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25℃ to 125℃.
3. VDD = 25V, starting TJ = 25℃, L = 32mH, RG = 25Ω, peak IAS = 1.3A.
Packaging
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Company Details
Business Type:
Distributor/Wholesaler,Trading Company
Year Established:
2004
Total Annual:
500000-1000000
Employee Number:
20~30
Ecer Certification：
Site Member
King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ... King--- Originator of ANTERWELL, engaged in the IC electronics industry in 1998 and establish ANTERWELL in 2004. The company is located in Shenzhen Huaqiang North, the largest electronic center in Asia. Our main business is the technical development and ...
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