Shanghai GaNova Electronic Information Co., Ltd.
| Payment Terms | T/T |
| Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | 2-inch Free-standing N-GaN Substrates |
| Dimensions | 50.0 ±0.3mm |
| Item | GaN-FS-C-N-C50-SSP |
| Thickness | 400 ± 30μm |
| N face surface roughness | 0.5 ~1.5μm (single side polished) |
| Orientation flat | (1- 100) ±0.1˚, 12.5 ± 1mm |
| Brand Name | GaNova |
| Model Number | JDCD01-001-020 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10000pcs/month |
| Delivery Time | 3-4 week days | Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
| Product Name | 2-inch Free-standing N-GaN Substrates | Dimensions | 50.0 ±0.3mm |
| Item | GaN-FS-C-N-C50-SSP | Thickness | 400 ± 30μm |
| N face surface roughness | 0.5 ~1.5μm (single side polished) | Orientation flat | (1- 100) ±0.1˚, 12.5 ± 1mm |
| Brand Name | GaNova | Model Number | JDCD01-001-020 |
| Certification | UKAS/ISO9001:2015 | Place of Origin | Suzhou China |
| High Light | Freestanding GaN Substrates ，Single Side Polished Epitaxial Wafer ，N GaN Substrates | ||
2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished)
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer
Overview
These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power devices for use in projector light sources, inverters for electric vehicles, and other applications.
Gallium nitride can also be synthesized by injecting ammonia gas into molten gallium at 900-980 °C at normal atmospheric pressure.
| 2-inch Free-standing N-GaN Substrates | ||||||
|
Production level(P) |
Research(R) |
Dummy(D) |
Note: (1) 5 points: the miscut angles of 5 positions are 0.55 ±0.15o (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.55 ±0.15o (3) Useable area: exclusion of periphery and macro defects (holes) | |||
| P+ | P | P- | ||||
| Item | GaN-FS-C-N-C50-SSP | |||||
| Dimensions | 50.0 ±0.3 mm | |||||
| Thickness | 400 ± 30 μm | |||||
| Orientation flat | (1- 100) ±0.1o, 12.5 ± 1 mm | |||||
| TTV | ≤ 15 μm | |||||
| BOW | ≤ 20 μm | |||||
| Resistivity (300K) | ≤ 0.02 Ω·cm for N-type (Si-doped) | |||||
| Ga face surface roughness | ≤ 0.3 nm (polished and surface treatment for epitaxy) | |||||
| N face surface roughness | 0.5 ~1.5 μm (single side polished) | |||||
| C plane (0001) off angle toward M-axis(miscut angles) | 0.55 ± 0.1o (5 points) | 0.55± 0.15o (5 points) | 0.55 ± 0.15o (3 points) | |||
| Threading dislocation density | ≤ 7.5 x 105 cm-2 | ≤ 3 x 106 cm-2 | ||||
| Number and max size of holes in Ф47 mm in the center | 0 | ≤ 3@1000 μm | ≤ 12@1500 μm | ≤ 20@3000 μm | ||
| Useable area | > 90% | >80% | >70% | |||
| Package | Packaged in a cleanroom in single wafer container | |||||
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
Company Details
Business Type:
Manufacturer
Year Established:
2020
Employee Number:
>100
Ecer Certification：
Verified Supplier
Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof... Shanghai GaNova Electronic Information Co., Ltd. is a company specialized in broadband semiconductor technology related materials, equipment, testing and analysis services and technical advice. Founded in 2020, we are a wholly-owned subsidiary of Suzhou Nanowin Technology Co., Ltd. Our team has prof...
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