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China factory - ChongMing Group (HK) Int'l Co., Ltd

ChongMing Group (HK) Int'l Co., Ltd

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  3. W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI
China W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI
China W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI

  1. China W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI

W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI

  1. MOQ： 10pcs
  2. Price： To be negotiated
  3. Get Latest Price
Payment Terms T/T, Western Union ,paypal
Supply Ability 10,000PCS
Delivery Time in stock 2-3days
Packaging Details Reel
Description FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns 8-WSON (8x6)
PN W25N01GVZEIG
BRANDS WINBOND
ORIGINAL TW
VOLTAGE 3V
MEMBORY 1G-BIT
TYPE SLC NAND Flash Memory IC
Brand Name WINBOND
Model Number W25N01GVZEIG
Certification CE/ RoHS
Place of Origin TW

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  1. Product Details
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Product Specification

Payment Terms T/T, Western Union ,paypal Supply Ability 10,000PCS
Delivery Time in stock 2-3days Packaging Details Reel
Description FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns 8-WSON (8x6) PN W25N01GVZEIG
BRANDS WINBOND ORIGINAL TW
VOLTAGE 3V MEMBORY 1G-BIT
TYPE SLC NAND Flash Memory IC Brand Name WINBOND
Model Number W25N01GVZEIG Certification CE/ RoHS
Place of Origin TW
High Light SLC Nand Flash Memory IC ，1G BIT Flash Memory IC ，SPI Memory Array IC

W25N01GVZEIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI

BUFFER READ & CONTINUOUS READ

 

 

3V 1G-BIT
SERIAL SLC NAND FLASH MEMORY WITH
DUAL / QUAD SPI
BUFFER READ & CONTINUOUS READ
 
 
1.GENERAL DESCRIPTIONS
The W25N01GV (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with
limited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and the
traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing
code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single
2.7V to 3.6V power supply with current consumption as low as 25mA active and 10µA for standby. All W25N
SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for
the typical NAND flash memory.
 
The W25N01GV 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each.
The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages
can be erased in groups of 64 (128KB block erase). The W25N01GV has 1,024 erasable blocks.
 
The W25N01GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock,
Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to
104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz
(104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions.
 
The W25N01GV provides a new Continuous Read Mode that allows for efficient access to the entire
memory array with a single Read command. This feature is ideal for code shadowing applications.
A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility.
Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID
page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash
memory manageability, user configurable internal ECC, bad block management are also available in
W25N01GV.
 
 
2. FEATURES
• New W25N Family of SpiFlash Memories
– W25N01GV: 1G-bit / 128M-byte
– Standard SPI: CLK, /CS, DI, DO, /WP,/Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Compatible SPI serial flash commands
 
• Highest Performance Serial NAND Flash
– 104MHz Standard/Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Fast Program/Erase performance
– More than 100,000 erase/program cycles
– More than 10-year data retention
 
• Efficient “Continuous Read Mode”(1)
– Alternative method to the Buffer Read Mode
– No need to issue “Page Data Read” between Read commands
– Allows direct read access to the entire array
 
• Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 25mA active, 10µA standby current
– -40°C to +85°C operating range
 
• Flexible Architecture with 128KB blocks
– Uniform 128K-Byte Block Erase
– Flexible page data load methods
 
• Advanced Features
– On chip 1-Bit ECC for memory array
– ECC status bits indicate ECC results
– bad block management and LUT(2) access
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– 2KB Unique ID and 2KB parameter pages
– Ten 2KB OTP pages(3)
 
• Space Efficient Packaging
– 8-pad WSON 8x6-mm
– 16-pin SOIC 300-mil
– 24-ball TFBGA 8x6-mm
– Contact Winbond for other package options
 
 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification：

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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Get in touch with us

  • Reach Us
  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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