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ChongMing Group (HK) Int'l Co., Ltd

  • China,Shenzhen
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China Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943
China Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

  1. China Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

  1. MOQ: 20pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Collector-base voltage -230 V
Collector-emitter voltage -230 V
Emitter-base voltage -5 V
Collector current -15 A
Base current -1.5 A
Collector power dissipation 150 W
Junction temperature 150℃
Storage temperature -55~150 ℃
Brand Name
Model Number 2SA1943
Certification new & original
Place of Origin original factory

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, Paypal Supply Ability 10000pcs
Delivery Time 1 day Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) Collector-base voltage -230 V
Collector-emitter voltage -230 V Emitter-base voltage -5 V
Collector current -15 A Base current -1.5 A
Collector power dissipation 150 W Junction temperature 150℃
Storage temperature -55~150 ℃ Brand Name
Model Number 2SA1943 Certification new & original
Place of Origin original factory
High Light npn smd transistorsilicon power transistors

 

Silicon PNP Power Transistors 2SA1943

 

DESCRIPTION

·With TO-3PL package

·Complement to type 2SC5200

 

 

APPLICATIONS

·Power amplifier applications

·Recommended for 100W high fidelity

 audio frequency amplifier output stage

 

 

PINNING

    PIN    DESCRIPTION
     1   Emitter
     2

  Collector;connected to

  mounting base

     3   Base

 

 

 

 

CHARACTERISTICS Tj=25℃ unless otherwise specified

 SYMBOL        PARAMETER    CONDITIONS    MIN    TYP.   MAX   UNIT
 V(BR)CEO  Collector-emitter breakdown voltage  IC=-50mA ;IB=0   -230        V
 VCEsat  Collector-emitter saturation voltage  IC=-8A IB=-0.8A       -3.0    V
 VBE  Base-emitter voltage  IC=-7A ; VCE=-5V       -1.5    V
 ICBO  Collector cut-off current  VCB=-230V; IE=0       -5   μA
 IEBO  Emitter cut-off current  VEB=-5V; IC=0       -5   μA
 hFE-1  DC current gain  IC=-1A ; VCE=-5V    55     160  
 hFE-2  DC current gain  IC=-7A ; VCE=-5V    35      
 fT  Transition frequency  IC=-1A ; VCE=-5V      30     MHz
 COB  Collector output capacitance  f=1MHz;VCB=-10V     360     pF

 

‹ hFE-1 classifications

      R          O
   55-110       80-160

 

PACKAGE OUTLINE

 

 

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2008

  • Total Annual:

    5000000-7000000

  • Employee Number:

    80~100

  • Ecer Certification:

    Active Member

CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...

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  • ChongMing Group (HK) Int'l Co., Ltd
  • Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
  • https://www.icmemorychip.com/

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