Payment Terms | T/T, Western Union, Paypal |
Supply Ability | 8000pcs |
Delivery Time | 1 day |
Packaging Details | Please contact me for details |
Description | Mosfet Array 30V 2W Surface Mount 8-SOIC |
Drain-Source Voltage | 30 / -30 V |
Gate-Source Voltage | ±20 V |
Pulsed Drain Current | 30 / -30 A |
Avalanche Current | 13 / 17 A |
Repetitive avalanche energy 0.3mH | 25 / 43 mJ |
Junction and Storage Temperature | -55 to 150°C |
Brand Name | |
Model Number | AO4620 |
Certification | new & original |
Place of Origin | original factory |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, Paypal | Supply Ability | 8000pcs |
Delivery Time | 1 day | Packaging Details | Please contact me for details |
Description | Mosfet Array 30V 2W Surface Mount 8-SOIC | Drain-Source Voltage | 30 / -30 V |
Gate-Source Voltage | ±20 V | Pulsed Drain Current | 30 / -30 A |
Avalanche Current | 13 / 17 A | Repetitive avalanche energy 0.3mH | 25 / 43 mJ |
Junction and Storage Temperature | -55 to 150°C | Brand Name | |
Model Number | AO4620 | Certification | new & original |
Place of Origin | original factory | ||
High Light | multi emitter transistor ,silicon power transistors |
AO4620 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications).
Features
n-channel p-channel
VDS (V) = 30V -30V
ID = 7.2A (VGS=10V) -5.3A (VGS = -10V)
RDS(ON) RDS(ON)
< 24mΩ (VGS=10V) < 38mΩ (VGS = -10V)
< 36mΩ (VGS=4.5V) < 60mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter | Symbol | Max n-channel | Max p-channel | Units | |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | 30 | -30 | V | |
Gate-Source Voltage | VGS | ±20 | ±20 | V | |
Continuous Drain Current F | TA=25°C | ID | 7.2 | -5.3 | A |
TA=70°C | 6.2 | -4.5 | A | ||
Pulsed Drain Current B | IDM | 30 | -30 | A | |
Power Dissipation F | TA=25°C | PD | 2 | 2 | W |
TA=70°C | 1.44 | 1.44 | W | ||
Avalanche Current B | IAR | 13 | 17 | A | |
Repetitive avalanche energy 0.3mH B | EAR | 25 | 43 | mJ | |
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | -55 to 150 | °C |
B: Repetitive rating, pulse width limited by junction temperature.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
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Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2008
Total Annual:
5000000-7000000
Employee Number:
80~100
Ecer Certification:
Active Member
CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron... CHONGMING GROUP (HK) INT'L CO., LTD. located in Hong Kong and Shenzhen. We are an independent Distributor of Electronic Components,established in 2008. AS a growing fast company, CM GROUP is renowned for its world-class efficiency, excellent services, and extraordinary ability to supply electron...
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