XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | silicon substrate Wafer |
| feature | Prime Grade |
| Dopant | P/As/Sb |
| Wafer Thickness | Power way |
| other name | Monocrystalline Wafer |
| Wafer Diameter | 3 inch |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | silicon substrate Wafer |
| feature | Prime Grade | Dopant | P/As/Sb |
| Wafer Thickness | Power way | other name | Monocrystalline Wafer |
| Wafer Diameter | 3 inch | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | float zone wafer ，epitaxial silicon wafer | ||
3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3"
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made according to SEMI standard( the Semiconductor Equipment and Materials International standards). We also work ultra thin wafer, silicon oxide wafer SiO2 thin film, silicon nitride wafer Si3N4 thin film, metallization on silicon substrate, and epi wafer service.
3inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3"
| Type | Conduction Type | Orientation | Diameter(mm) | Resistivity(Ω•cm) |
| High resistance | N&P | <100>&<111> | 50 - 300 | >1000 |
| NTD | N | <100>&<111> | 50 - 300 | 30-800 |
| CFZ | N&P | <100>&<111> | 50 - 300 | 1-50 |
| GD | N&P | <100>&<111> | 50 - 300 | 0.001-300 |
| Parameter | Unit | Value |
| Crystalline structure | - | Monocrystalline |
| Growth technique | - | FZ |
| Crystal Orientation | - | 100 |
| Conductance type | - | N |
| Dopant | - | P/As/Sb |
| Diameter | mm | 76.2 |
| Resistivity | Ω/cm2 | >1000, 30-800, 1-50, 0.001-300 |
| Thickness | um | 350±15um 230±15um 380±25um |
| TTV | um | ≤10 um |
| BOW | um | ≤40 um |
| Warp | um | ≤40 um |
| (G)STIR | um | Customer standard |
| Site Flatness-STIR | um | Customer standard |
| Edge Exclusion Zone | mm | SEMI STD or Customer Request |
| LPD's | - | ≥0.3μm, <30count or Customer Request |
| Oxygen Concentration | ppma | <1E16/cc |
| Carbon Concentration | ppma | <1E16/cc |
| RRG | - | ≤15% |
| Front Surface | - | Polished |
| Back Surface | - | Polished or Etched |
| Edge Surface Condition | SEMI STD or Customer Request | |
| Primary Flat Length | mm | SEMI STD |
| Primary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Secondary Flat Length | mm | SEMI STD |
| Secondary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Laser mark | - | SEMI STD or Customer Request |
| Packaging | Packaged in a class 100 clean room environment, Heat-sealed plastic inner/aluminium foil outer bags, Vacuum Packing |
|
| If specific requirement by customer, will adjust accordingly | ||
What is a Silicon Wafer?
Silicon wafer is the most common semiconductor and the most widely used in the electronic and technology sector, which is a key component in integrated circuits, during the growth process intentional additions of dopants can be added to the to change the purity of the silicon depending on what the purpose of it will be, boron, aluminum, nitrogen, gallium and indium are common silicon dopants. Depending on what level the silicon has been doped, the semiconductor can be considered extrinsic or degenerate. Extrinsic would be lightly to moderately doped whereas degenerate semiconductors act more as conductors because of the high levels of doping that occurs during the fabrication.
PAM-XIAMEN can offer you technology and wafer support, for more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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