XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | Gallium Antimonide Substrate Wafer |
| Conduction Type | P type |
| Dopant | Undoped |
| Wafer Thickness | 800±25um |
| other name | GaSb Polished Wafer |
| Wafer Diameter | 4 inch |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | Gallium Antimonide Substrate Wafer |
| Conduction Type | P type | Dopant | Undoped |
| Wafer Thickness | 800±25um | other name | GaSb Polished Wafer |
| Wafer Diameter | 4 inch | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | 2 inch wafer ，4 inch wafer | ||
Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready
PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).
4" GaSb Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | P-type |
| Wafer Diameter | 4" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 800±25um |
| Primary Flat Length | 32.5±2.5mm |
| Secondary Flat Length | 18±1mm |
| Carrier Concentration | (1-2)x1017cm-3 |
| Mobility | 600-700cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <15um |
| BOW | <15um |
| WARP | <20um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
| Bulk modulus | 5.63·1011 dyn cm-2 |
| Melting point | 712 °C |
| Specific heat | 0.25 J g-1°C -1 |
| Thermal conductivity | 0.32 W cm-1 °C-1 |
| Thermal diffusivity | 0.23 cm2s-1 |
| Thermal expansion, linear | 7.75·10-6 °C -1 |
| Temperature dependence of thermal conductivity n-GaSb. Electron concentration at 300 K n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018; p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3) |
| Temperature dependence of thermal conductivity (for high temperature) |
| Temperature dependence of specific heat at constant pressure |
| Temperature dependence of linear expansion coefficient |
Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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