XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| name | SIC As-Cut Wafer |
| type | N Type |
| Description | 4H N Type SIC As-Cut Wafer, 2”Size |
| keywords | single crystal SiC |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
View Detail Information
Explore similar products
6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
C(0001) 6H N Type SiC Wafer, Research Grade,Epi Ready, 2”Sizes
On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size
6H N Type SiC Wafer, Dummy Grade,2”Size -SiC Wafer Supplier
Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | name | SIC As-Cut Wafer |
| type | N Type | Description | 4H N Type SIC As-Cut Wafer, 2”Size |
| keywords | single crystal SiC | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | silicon carbide wafer ，4h sic wafer | ||
4H N Type SiC(Silicon Carbide) As-Cut Wafer, 2”Size - Powerway Wafer
PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.
Please contact us for more information:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SC As-Cut Wafer, 2”Size
| 2" 4H Silicon Carbide | |||||||
| Item No. | Type | Orientation | Thickness | Grade | Micropipe Density | Surface | Usable area |
| N-Type | |||||||
| S4H-51-N-SIC-330-A | 2" 4H-N | 0°/4°±0.5° | 330±25um | A | <10/cm2 | C/P | >90% |
| S4H-51-N-SIC-330-B | 2" 4H-N | 0°/4°±0.5° | 330±25um | B | < 30/cm2 | C/P | >85% |
| S4H-51-N-SIC-330-D | 2" 4H-N | 0°/4°±0.5° | 330±25um | D | <100/cm2 | C/P | >75% |
| S4H-51-N-SIC-370-L | 2" 4H-N | 0°/4°±0.5° | 370±25um | D | * | L/L | >75% |
| S4H-51-N-SIC-410-AC | 2" 4H-N | 0°/4°±0.5° | 410±25um | D | * | As-cut | >75% |
| S4H-51-N-SIC-C0510-AC-D | 2" 4H-N | 0°/4°±0.5° | 5~10mm | D | <100/cm2 | As-cut | * |
| S4H-51-N-SIC-C1015-AC-D | 2" 4H-N | 0°/4°±0.5° | 10~15mm | D | <100/cm2 | As-cut | * |
| S4H-51-N-SIC-C0510-AC-C | 2" 4H-N | 0°/4°±0.5° | 5~10mm | C | <50/cm2 | As-cut | * |
| S4H-51-N-SIC-C1015-AC-C | 2" 4H-N | 0°/4°±0.5° | 10~15mm | C | <50/cm2 | As-cut | * |
SiC crystal growth
Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.
Electrical Properties
Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype
exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor
electrical properties of the 3C, 4H, and 6H SiC polytypes are given in Table 5.1. Much more
detailed electrical properties can be found in References 11–13 and references therein. Even within a
given polytype, some important electrical properties are nonisotropic, in that they are strong functions
of crystallographic direction of current flow and applied electric field (for example, electron mobility
for 6H-SiC). Dopant impurities in SiC can incorporate into energetically inequivalent sites. While all
dopant ionization energies associated with various dopant incorporation sites should normally be
considered for utmost accuracy, Table 5.1 lists only the shallowest reported ionization energies of each
impurity
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
Get in touch with us
Leave a Message, we will call you back quickly!