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Hi-Tech Optoelectronics Co., Ltd

  • China,Beijing ,Beijing
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China 980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can
China 980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

  1. China 980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

  1. MOQ: 200 pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000 pcs per month
Delivery Time 10-20 working days
Packaging Details Paper Box
Output power 5 Watt
Lasing Wavelength 980 nm
Operating Current ≤ 5.8 A
Operating Voltage ≤ 3.0 V
Package TOØ56
Threshold Current ≤ 1.0 A
Brand Name HTOE
Model Number LDMP-0980-005W-*4
Place of Origin Beijing, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000 pcs per month
Delivery Time 10-20 working days Packaging Details Paper Box
Output power 5 Watt Lasing Wavelength 980 nm
Operating Current ≤ 5.8 A Operating Voltage ≤ 3.0 V
Package TOØ56 Threshold Current ≤ 1.0 A
Brand Name HTOE Model Number LDMP-0980-005W-*4
Place of Origin Beijing, China
High Light to mount laser diodecollimated laser diode module

980 nm Packaged Laser Diode , ms pulse TO Package Single Emitter Diode Laser

LDMP-0980-005W-*4 series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. With 20 years' experience in laser diode design and production, HTOE packaged single emitters provide excellent reliability and performance.

 

A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.

 

Advantages

  • 980nm Center wavelength
  • 5.6mm in TO Package design
  • Provide beam shaping services like fast-axis compression according to customer demands
  • 20 years' experience in packaged laser diode design and production

Parameters(20℃)

TOØ56 Packaged Single Emitter
Item Parameter Unit LDMP-0980-005W-*4
Min. Typical Max.
Optical Parameter Output power W - 5 (ms pulse) -
Lasing Wavelength nm 970 980 990
Spectral Width nm - 1.80 3.00
Emitting Area width µm - 150 -
Temperature Coefficient nm/℃ - 0.3 -
Fast Axis Divergence deg (cw-5w) - 25 30
Slow Axis Divergence deg (cw-5w) - 10 15
Pulse Width ms 0 10 -
Pulse Frequency Hz 0 10 -
Electrical Parameter Slope Efficiency W/A 0.90 1.00 -
Threshold Current A - 0.50 1.00
Operating Current A - 5.50 5.80
Operating Voltage V - 2.20 3.00
Others Package - TOØ56
Operating Temperature 10 ~ 50
Storage Temperature -10 ~ 60
 
 

Package Information

 

TOØ56 Package

 

Function Curve

P-I-V Curve

 

Notice

 

1. Item model notice: LDMP (Item model), 0980 (Center wavelength), 005W (Output power), *4 (Heat sink structure and item width).

2. Data in the sheet are all based on TOØ56 (socket, capless) package testing under 10ms 10Hz pulse condition.

3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.

4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.

5. The exceed power output will speed up the aging of the LD.

6. Laser diode belongs to electrostatic sensitive components. Should deal with anti-electrostatic method. To touch the LD directly unless human-body is well connect with ground. Otherwise the LD will be burned easily. To wear anti-electrostatic wrist band is necessary.

7. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    1998

  • Total Annual:

    3500000-4500000

  • Employee Number:

    100~200

  • Ecer Certification:

    Active Member

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...

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  • Hi-Tech Optoelectronics Co., Ltd
  • Shahe Industrial Park, Changping District, Beijing, China
  • http://www.htoelaserdiode.com/

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