1200V 300A IGBT Module FF300R12KT4 Silicon Dual Configuration ROHS Approval

Product Specification

                                                                IGBT Module FF300R12KT4

Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,05 2,10 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 2,40 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 2,5 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 19,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,81 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω td on 0,16 0,17 0,18 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktivAnstiegszeit,induktiveLast Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 1,8 Ω tr 0,04 0,045 0,05 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω td off 0,45 0,52 0,54 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 1,8 Ω tf 0,10 0,16 0,18 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 150°C) RGon = 1,8 Ω Eon 16,5 25,0 30,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 300 A, VCE = 600 V, LS = 30 nH VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) RGoff = 1,8 Ω Eoff 19,5 29,5 32,5 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC tP ≤ 10 µs, Tvj = 125°C 1200 A Wärmewiderstand,ChipbisGehäu

Q1. What is your terms of packing?

A: Generally, we pack our goods in neutral white boxes and brown cartons.

If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.

Q2. What is your MOQ?

A: We provide you small MOQ for each item, it depends your specific order!

Q3. Do you test or check all your goods before delivery?

A: Yes, we have 100% test and check all goods before delivery.

Q4: How do you make our business long-term and good relationship?

We keep good quality and competitive price to ensure our customers benefit ;

We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.

Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!

Shenzhen Hongxinwei Technology Co., Ltd

To adopt new technology,to produce products of quality,to offer high-class service.

Improve the management system continuously to meet customer requirement for high-quality products and services.

Why choose us?

• 100% new and originao with Advantage price
• High efficiency
• Fast Delivery
• Professional team service
• 10 Years Experience Electronic components
• Electronic components Agent
• Advantage logistic discount
• Excellent After-sales Service