HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days |
| Packaging Details | Strong wooden box for Global shipping |
| Application | High power device Optoelectronic device GaN epitaxy device Light emitting diode |
| Diameter | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
| Thickness | 330 um ~ 350 um |
| Grade | Production grade / Research grade |
| Brand Name | ZG |
| Model Number | MS |
| Certification | CE |
| Place of Origin | CHINA |
View Detail Information
Explore similar products
Aluminum Nitride Ceramics, with Very High Thermal Conductivity
99% SIC SILICON CARBIDE MICRO REACTION PLATE 200MM 300MM LENGTH
HMI PLC Lifting Sintering Furnace
TECHNICAL CERAMICS FOR WIRE PRODUCTION AND CABLE INDUSTRY
Product Specification
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days | Packaging Details | Strong wooden box for Global shipping |
| Application | High power device Optoelectronic device GaN epitaxy device Light emitting diode | Diameter | Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
| Thickness | 330 um ~ 350 um | Grade | Production grade / Research grade |
| Brand Name | ZG | Model Number | MS |
| Certification | CE | Place of Origin | CHINA |
SIC Wafer
Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
SiC Wafer Application
| High frequency device | High temperature device |
| High power device | Optoelectronic device |
| GaN epitaxy device | Light emitting diode |
SiC Wafer Properties
| Polytype | 6H-SiC | 4H-SiC |
| Crystal stacking sequence | ABCABC | ABCB |
| Lattice parameter | a=3.073A , c=15.117A | a=3.076A , c=10.053A |
| Band-gap | 3.02 eV | 3.27 eV |
| Dielectric constant | 9.66 | 9.6 |
| Refraction Index | n0 =2.707 , ne =2.755 | n0 =2.719 ne =2.777 |
Product Specification
| Polytype | 4H / 6H |
|---|---|
| Diameter | Ø 2" / Ø 3" / Ø 4" |
| Thickness | 330 um ~ 350 um |
| Orientation | On axis <0001> / Off axis <0001> off 4° |
| Conductivity | N - type / Semi-insulating |
| Dopant | N2 ( Nitrogen ) / V ( Vanadium ) |
| Resistivity ( 4H-N ) | 0.015 ~ 0.03 ohm-cm |
| Resistivity ( 6H-N ) | 0.02 ~ 0.1 ohm-cm |
| Resistivity ( SI ) | > 1E5 ohm-cm |
| Surface | CMP polished |
| TTV | <= 15 um |
| Bow / Warp | <= 25 um |
| Grade | Production grade / Research grade |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter
Year Established:
2007
Total Annual:
5000000-8000000
Employee Number:
50~100
Ecer Certification：
Verified Supplier
Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic... Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic...
Get in touch with us
Leave a Message, we will call you back quickly!