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China factory - Sanhuang electronics (Hong Kong) Co., Limited

Sanhuang electronics (Hong Kong) Co., Limited

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  3. S29GL512S10DHI010 IC FLASH 512MBIT PARALLEL 64FBGA Infineon Technologies
China S29GL512S10DHI010 IC FLASH 512MBIT PARALLEL 64FBGA Infineon Technologies
China S29GL512S10DHI010 IC FLASH 512MBIT PARALLEL 64FBGA Infineon Technologies

  1. China S29GL512S10DHI010 IC FLASH 512MBIT PARALLEL 64FBGA Infineon Technologies

S29GL512S10DHI010 IC FLASH 512MBIT PARALLEL 64FBGA Infineon Technologies

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Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 60ns
Access Time 100 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Brand Name Infineon Technologies
Model Number S29GL512S10DHI010

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability In stock
Delivery Time 3-5 work days Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 512Mbit
Memory Organization 32M x 16 Memory Interface Parallel
Clock Frequency - Write Cycle Time - Word, Page 60ns
Access Time 100 ns Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 64-LBGA Supplier Device Package 64-FBGA (9x9)
Brand Name Infineon Technologies Model Number S29GL512S10DHI010

Product Details

 

GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family

S29GL01GS 1 Gbit (128 Mbyte)
S29GL512S 512 Mbit (64 Mbyte)
S29GL256S 256 Mbit (32 Mbyte)
S29GL128S 128 Mbit (16 Mbyte)
CMOS 3.0 Volt Core with Versatile I/O

 

 

General Description

The Spansion® S29GL01G/512/256/128S are MirrorBit Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time asfast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting infaster effective
programming time than standard programming algorithms. Thismakes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

 

 

Distinctive Characteristics

65 nm MirrorBit Eclipse Technology
Single supply (VCC) for read / program / erase (2.7V to 3.6V)
Versatile I/O Feature
– Wide I/O voltage range (VIO): 1.65V to VCC
x16 data bus
Asynchronous 32-byte Page read
512-byte Programming Buffer
– Programming in Page multiples, up to a maximum of 512 bytes
Single word and multiple program on same word options
Sector Erase
– Uniform 128-kbyte sectors
Suspend and Resume commands for Program and Erase operations
Status Register, Data Polling, and Ready/Busy pin methods to determine device status
Advanced Sector Protection (ASP)
– Volatile and non-volatile protection methods for each sector
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Common Flash Interface (CFI) parameter table
Temperature Range
– Industrial (-40°C to +85°C)
– In-Cabin (-40°C to +105°C)
100,000 erase cycles for any sector typical
20-year data retention typical
Packaging Options
– 56-pin TSOP
– 64-ball LAA Fortified BGA, 13 mm x 11 mm
– 64-ball LAE Fortified BGA, 9 mm x 9 mm
– 56-ball VBU Fortified BGA, 9 mm x 7 mm

 

Specifications

Attribute Attribute Value
Manufacturer SPANSION
Product Category Memory ICs
Series GL-S
Packaging Tray
Unit-Weight 0.006004 oz
Mounting-Style SMD/SMT
Operating-Temperature-Range - 40 C to + 85 C
Package-Case 64-LBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 2.7 V ~ 3.6 V
Supplier-Device-Package 64-Fortified BGA (9x9)
Memory Capacity 512M (32M x 16)
Memory-Type FLASH - NOR
Speed 100ns
Architecture Sector
Format-Memory FLASH
Interface-Type Parallel
Organization 32 M x 16
Supply-Current-Max 60 mA
Data-Bus-Width 16 bit
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 2.7 V
Package-Case BGA-64
Timing-Type Asynchronous

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part# Description Manufacturer Compare
S29GL512S11DHIV20
Memory		 Flash, 64MX8, 110ns, PBGA64, PACKAGE Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S11DHIV20
S29GL512S10DHI010
Memory		 Flash, 64MX8, 100ns, PBGA64, PACKAGE Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S10DHI010
S29GL512S11DHIV23
Memory		 Flash, 64MX8, 110ns, PBGA64, PACKAGE Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S11DHIV23
S29GL512S10DHI020
Memory		 Flash, 64MX8, 100ns, PBGA64, PACKAGE Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S10DHI020
S29GL512S11DHI010
Memory		 Flash, 64MX8, 110ns, PBGA64, 9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64 Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S11DHI010
S29GL512S10FHI010
Memory		 Flash, 64MX8, 110ns, PBGA64, PACKAGE Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S10FHI010
S29GL512S11DHIV10
Memory		 Flash, 64MX8, 110ns, PBGA64, PACKAGE Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S11DHIV10
S29GL512S11FHI020
Memory		 EEPROM Card, 32MX16, 110ns, Parallel, CMOS, PBGA64, FBGA-64 Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S11FHI020
S29GL512S10FHI020
Memory		 EEPROM Card, 32MX16, 100ns, Parallel, CMOS, PBGA64, FBGA-64 Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S10FHI020
S29GL512S11FHI013
Memory		 EEPROM Card, 32MX16, 110ns, Parallel, CMOS, PBGA64, FBGA-64 Cypress Semiconductor S29GL512S10DHI010 vs S29GL512S11FHI013

Descriptions

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 100ns 64-Fortified BGA (9x9)
NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 100ns 64-Pin Fortified BGA Tray
Flash Memory 512 MBIT 3V 100NS Parallel NOR Flash

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Distributor/Wholesaler,Trading Company

  • Year Established:

    2005

  • Total Annual:

    1000000-3000000

  • Employee Number:

    100~150

  • Ecer Certification：

    Verified Supplier

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Get in touch with us

  • Reach Us
  • Sanhuang electronics (Hong Kong) Co., Limited
  • No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
  • https://www.integratedcircuit-ic.com/

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