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China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W
China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W

  1. China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W
  2. China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W
  3. China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W
  4. China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W
  5. China FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W

FS30R06W1E3 INFINEON IGBT Module N-CH 600V 45A 150 W

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Payment Terms T/T
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.55 V
Continuous Collector Current at 25 ℃ 45 A
Gate-Emitter Leakage Current 400nA
Pd - Power Dissipation 150 W
Package / Case EASY1B
Minimum Operating Temperature - 40 ℃
Maximum Operating Temperature + 150 ℃
Height 12mm
Width 33.8mm
Length 62.8mm
Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount
Weight 24 g
Brand Name INFINEON
Model Number FS30R06W1E3

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Product Specification

Payment Terms T/T Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.55 V Continuous Collector Current at 25 ℃ 45 A
Gate-Emitter Leakage Current 400nA Pd - Power Dissipation 150 W
Package / Case EASY1B Minimum Operating Temperature - 40 ℃
Maximum Operating Temperature + 150 ℃ Height 12mm
Width 33.8mm Length 62.8mm
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Weight 24 g Brand Name INFINEON
Model Number FS30R06W1E3
High Light FS30R06W1E3 INFINEON IGBT Module600V INFINEON IGBT Module150 W INFINEON IGBT

Product Description:

The INFINEON FS30R06W1E3 IGBT Module is a high-performance power semiconductor device that is designed to provide efficient and reliable operation in a variety of applications. This module comes in a 6-Pack configuration and features a low Collector-Emitter Saturation Voltage of 1.55 V, which helps to reduce power losses and improve overall efficiency. With a maximum Collector- Emitter Voltage VCEO rating of 600V and a Continuous Collector Current of 45 A at 25 C, this IGBT module is capable of handling high-power applications with ease.

 

The module is equipped with a Maximum Gate Emitter Voltage of 20 V, and a Gate-Emitter Leakage Current of 400 nA, ensuring safe and reliable operation even in extreme conditions. Additionally, the INFINEON FS30R06W1E3 IGBT Module has a Pd - Power Dissipation of 150 W, making it an excellent choice for high-power motor drives, renewable energy systems, and other applications that require reliable and efficient power management.

 

This IGBT module is part of the Trenchstop IGBT3 - E3 series and features Si technology. It comes in the EasyPACK package/case, which has dimensions of 62.8mm x 33.8mm x 12mm (L x W x H) and can be easily chassis mounted. The INFINEON FS30R06W1E3 IGBT Module is available in tray packaging and has a unit weight of 24 g.

 

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MMR Technology is a leading supplier of the solutions for manufacturing/repair and maintenance in the Industrials of information technologies/renewable energy and medical equipment, we're a group of people who dedicated to provide the completely solutions and the best service to the customers fo... MMR Technology is a leading supplier of the solutions for manufacturing/repair and maintenance in the Industrials of information technologies/renewable energy and medical equipment, we're a group of people who dedicated to provide the completely solutions and the best service to the customers fo...

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  • Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK
  • https://www.mmrtechnology.com/

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