Shenzhen Hua Xuan Yang Electronics Co.,Ltd
| Packaging Details | Boxed |
| Delivery Time | 1 - 2 Weeks |
| Payment Terms | L/C T/T Western Union |
| Supply Ability | 18,000,000PCS / Per Day |
| Type | Semiconductor Triode |
| Power Mosfet Transistor | TO-126 Plastic Encapsulated |
| Product ID | TIP122 TIP127 |
| Feature | High DC Current Gain |
| Collector Power Dissipation | 1.25w |
| Junction Temperature | 150℃ |
| Place of Origin | ShenZhen China |
| Brand Name | Hua Xuan Yang |
| Certification | RoHS、SGS |
| Model Number | TIP127 |
View Detail Information
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Product Specification
| Packaging Details | Boxed | Delivery Time | 1 - 2 Weeks |
| Payment Terms | L/C T/T Western Union | Supply Ability | 18,000,000PCS / Per Day |
| Type | Semiconductor Triode | Power Mosfet Transistor | TO-126 Plastic Encapsulated |
| Product ID | TIP122 TIP127 | Feature | High DC Current Gain |
| Collector Power Dissipation | 1.25w | Junction Temperature | 150℃ |
| Place of Origin | ShenZhen China | Brand Name | Hua Xuan Yang |
| Certification | RoHS、SGS | Model Number | TIP127 |
| High Light | electronic components triode ，semiconductor switch | ||
TO-126 Plastic-Encapsulate Transistors
TIP122 Darlington Transistor (NPN)
TIP127 Darlington Transistor (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
MARKING
TIP122 , TIP127=Device code
Solid dot = Green molding compound device, if none, the normal device XX=Code
Equivalent Circuit
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| TIP122 | TO-126 | Bulk | 200pcs/Bag |
| TIP127 | TO-126 | Bulk | 200pcs/Bag |
| TIP122-TU | TO-126 | Tube | 60pcs/Tube |
| TIP127-TU | TO-126 | Tube | 60pcs/Tube |
| Symbol | Parameter | TIP122 | TIP127 | Unit |
| VCBO | Collector-Base Voltage | 100 | -100 | V |
| VCEO | Collector-Emitter Voltage | 100 | -100 | V |
| VEBO | Emitter-Base Voltage | 5 | -5 | V |
| IC | Collector Current -Continuous | 5 | -5 | A |
| PC * | Collector Power Dissipation | 1.25 | W | |
| RθJA | Thermal Resistance Junction to Ambient | 100 | ℃/W | |
| RθJc | Thermal Resistance Junction to Case | 8.33 | ℃/W | |
| TJ | Junction Temperature | 150 | ℃ | |
| Tstg | Storage Temperature | -55~+150 | ℃ | |
Ta=25 Š unless otherwise specified
| TIP122 NPN | |||||
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=1mA,IE=0 | 100 | V | |
| Collector-emitter breakdown voltage | VCEO(SUS) | IC=30mA,IB=0 | 100 | V | |
| Collector cut-off current | ICBO | VCB=100V, IE=0 | 0.2 | mA | |
| Collector cut-off current | ICEO | VCE=50 V, IB=0 | 0.5 | mA | |
| Emitter cut-off current | IEBO | VEB=5 V, IC=0 | 2 | mA | |
|
DC current gain | hFE(1) | VCE= 3V, IC=0.5A | 1000 | ||
| hFE(2) | VCE= 3V, IC=3 A | 1000 | 12000 | ||
|
Collector-emitter saturation voltage |
VCE(sat) | IC=3A,IB=12mA | 2 |
V | |
| IC=5 A,IB=20mA | 4 | ||||
| Base-emitter voltage | VBE | VCE=3V, IC=3 A | 2.5 | V | |
| Output Capacitance | Cob | VCB=10V, IE=0,f=0.1MHz | 200 | pF | |
| TIP127 PNP | |||||
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-1mA,IE=0 | -100 | V | |
| Collector-emitter breakdown voltage | VCEO(SUS) | IC=-30mA,IB=0 | -100 | V | |
| Collector cut-off current | ICBO | VCB=-100V, IE=0 | -0.2 | mA | |
| Collector cut-off current | ICEO | VCE=-50 V, IB=0 | -0.5 | mA | |
| Emitter cut-off current | IEBO | VEB=-5 V, IC=0 | -2 | mA | |
|
DC current gain | hFE(1) | VCE=-3V, IC=-0.5A | 1000 | ||
| hFE(2) | VCE=-3V, IC=-3A | 1000 | 12000 | ||
|
Collector-emitter saturation voltage |
VCE(sat) | IC=-3A,IB=-12mA | -2 |
V | |
| IC=-5 A,IB=-20mA | -4 | ||||
| Base-emitter voltage | VBE | VCE=-3V, IC=-3 A | -2.5 | V | |
| Output Capacitance | Cob | VCB=-10V, IE=0,f=0.1MHz | 300 | pF | |
* This test is performed with no heat sink at Ta=25℃.
TO-126 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 2.500 | 2.900 | 0.098 | 0.114 |
| A1 | 1.100 | 1.500 | 0.043 | 0.059 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.450 | 0.600 | 0.018 | 0.024 |
| D | 7.400 | 7.800 | 0.291 | 0.307 |
| E | 10.600 | 11.000 | 0.417 | 0.433 |
| e | 2.290 TYP | 0.090 TYP | ||
| e1 | 4.480 | 4.680 | 0.176 | 0.184 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 15.300 | 15.700 | 0.602 | 0.618 |
| L1 | 2.100 | 2.300 | 0.083 | 0.091 |
| P | 3.900 | 4.100 | 0.154 | 0.161 |
| Φ | 3.000 | 3.200 | 0.118 | 0.126 |
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification：
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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