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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  • China,Shenzhen ,Guangdong
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China HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise
China HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

  1. China HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

  1. MOQ: 1000-2000 PCS
  2. Price: Negotiated
  3. Get Latest Price
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor
VDS 30V
RDS(ON) < 35mΩ (VGS = 4.5V)
RDS(ON) < 23mΩ (VGS = 10V)
Type mosfet transistor
Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Model Number HXY4466

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  1. Product Details
  2. Company Details

Product Specification

Packaging Details Boxed Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor VDS 30V
RDS(ON) < 35mΩ (VGS = 4.5V) RDS(ON) < 23mΩ (VGS = 10V)
Type mosfet transistor Place of Origin ShenZhen China
Brand Name Hua Xuan Yang Certification RoHS、SGS
Model Number HXY4466
High Light logic mosfet switchmosfet driver using transistor
60V N-Channel AlphaSGT HXY4264
 

 

Product Summary

 

VDS 30V
I = 10A VGS = 10V)
RDS(ON) < 23mΩ (VGS = 10V)
RDS(ON) < 35mΩ (VGS = 4.5V)


 

General Description

 

The HXY4466 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

 

 

 

 

Electrical Characteristics (T =25°C unless otherwise noted)

 

 

 

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT =25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.

 

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2008

  • Total Annual:

    8000000-10000000

  • Employee Number:

    150~200

  • Ecer Certification:

    Active Member

Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...

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Get in touch with us

  • Reach Us
  • Shenzhen Hua Xuan Yang Electronics Co.,Ltd
  • Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
  • https://www.mosfet-powertransistor.com/

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