AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch

Product Specification

AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch

Mos Field Effect Transistor Introduction

Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and size less metalwork and cooling is required. Also the low ON resistance means that efficiency levels can be maintained at a higher level

Mos Field Effect Transistor Features

VDS = 100V ID =15A
RDS(ON) < 120mΩ @ VGS=10V

Mos Field Effect Transistor Application

VDS = 100V ID =15A
RDS(ON) < 120mΩ @ VGS=10V

Package Marking and Ordering Information

Electrical Characteristics (TJ=25 ℃, unless otherwise noted

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A

4.The power dissipation is limited by 175℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

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