Hangzhou Freqcontrol Electronic Technology Ltd.
Products
Manufacturer of a wide range of products which include 1'' To 8'' Sapphire Wafer For High-Frequency High-Power High-Temperature Devices,SiO2 Fused Quartz And Fused Silica Wafer In Infrared And Ultraviolet Spectrum,Fused Quartz Gla...
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Orientation | C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10] |
| Diameter | Φ1inch to 8inch |
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 pcs
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 20000 pcs/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette/ Jar package, vaccum sealed |
| Material | Fused Silica Wafer |
| Structure | Amorphous Phase |
| Diameter | 76.2mm, 100mm, 150mm |
| Thickness | 375um, 525um, 675um |
| Warp | <40um, <70um |
| BOW | ±30um, ±40um |
| TTV | <5um, <10um |
| Transmission | Infrared and Ultraviolet Spectrum |
| Brand Name | BonTek |
| Model Number | Fused Silica, Fused Quartz |
| Certification | ISO:9001, ISO:14001 |
| Place of Origin | China |
MOQ: 5 pcs
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 20000 pcs/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette/ Jar package, vaccum sealed |
| Material | Glass Substrate |
| Series | Fused Quartz, Fused Silica, Borosilicate |
| Brand | Schott, Feilihua, Corning |
| Use | Etching Structuring Masks |
| Dia. | 4inch, 6inch, 8inch, 12inch |
| Thickness | 0.5±0.025mm, 1±0.025mm, etc. |
| Edge Profile | "C" Shape |
| Surface | Single / Double Side Polish |
| Brand Name | BonTek |
| Model Number | Fused Silica, Fused Quartz |
| Certification | ISO:9001, ISO:14001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Growth | Kyropoulos method |
| Melting Point | 2040 °C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Growth | Kyropoulos method |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Al2O3 Wafer |
| Purity | 99.999％ |
| Melting Point | 2040 °C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Diameter | 5 inch, 125mm |
| Hardness | 9.0 |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire (Al2O3) Crystal |
| Type | Single Crystal |
| Color | White / Red / Blue |
| Purity | 99.999％ |
| Surface | Double side polish |
| VIS range | 85% |
| Application | Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics |
| Industry | Led，optical Glass，eli-ready Wafer |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Type | Single Crystal |
| Application | orward Looking Infra Red |
| Growth Method | Horizontally Directed Crystallization (HDC) |
| Melting Point | 2040 degrees C |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
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