Hangzhou Freqcontrol Electronic Technology Ltd.
Products
Manufacturer of a wide range of products which include Sapphire Al2O3 Crystal Substrate 2'' 3'' 4'' Double Side Polished For Optical Use,SiO2 Fused Quartz And Fused Silica Wafer In Infrared And Ultraviolet Spectrum,Fused Quartz Gl...
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire (Al2O3) Crystal |
| Type | Single Crystal |
| Color | White / Red / Blue |
| Purity | 99.999％ |
| Surface | Double side polish |
| VIS range | 85% |
| Application | Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics |
| Industry | Led，optical Glass，eli-ready Wafer |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 pcs
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 20000 pcs/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette/ Jar package, vaccum sealed |
| Material | Fused Silica Wafer |
| Structure | Amorphous Phase |
| Diameter | 76.2mm, 100mm, 150mm |
| Thickness | 375um, 525um, 675um |
| Warp | <40um, <70um |
| BOW | ±30um, ±40um |
| TTV | <5um, <10um |
| Transmission | Infrared and Ultraviolet Spectrum |
| Brand Name | BonTek |
| Model Number | Fused Silica, Fused Quartz |
| Certification | ISO:9001, ISO:14001 |
| Place of Origin | China |
MOQ: 5 pcs
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 20000 pcs/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette/ Jar package, vaccum sealed |
| Material | Glass Substrate |
| Series | Fused Quartz, Fused Silica, Borosilicate |
| Brand | Schott, Feilihua, Corning |
| Use | Etching Structuring Masks |
| Dia. | 4inch, 6inch, 8inch, 12inch |
| Thickness | 0.5±0.025mm, 1±0.025mm, etc. |
| Edge Profile | "C" Shape |
| Surface | Single / Double Side Polish |
| Brand Name | BonTek |
| Model Number | Fused Silica, Fused Quartz |
| Certification | ISO:9001, ISO:14001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Growth | Kyropoulos method |
| Melting Point | 2040 °C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Growth | Kyropoulos method |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Al2O3 Wafer |
| Purity | 99.999％ |
| Melting Point | 2040 °C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Diameter | 5 inch, 125mm |
| Hardness | 9.0 |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Orientation | C-axis [0001], R-axis [1-102], A-axis [11-20], M-axis [10-10] |
| Diameter | Φ1inch to 8inch |
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
MOQ: 5 Pieces
Price: Negotiable
| Payment Terms | T/T |
| Supply Ability | 10000 pieces/Month |
| Delivery Time | 1-4 weeks |
| Packaging Details | Cassette, Jar, Film package |
| Material | Sapphire Wafer |
| Type | Single Crystal |
| Application | orward Looking Infra Red |
| Growth Method | Horizontally Directed Crystallization (HDC) |
| Melting Point | 2040 degrees C |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Brand Name | BonTek |
| Model Number | Sapphire (Al2O3) |
| Certification | ISO:9001 |
| Place of Origin | China |
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