AMB Si3N4 Ceramic PCB - 96% Substrate, 80 W/MK Thermal Conductivity, 100um

Product Specification

Brief Introduction

This is a single-sided ceramic PCB constructed with 96% Silicon Nitride (Si3N4) ceramic substrates, using Active Metal Brazing (AMB) technology. The AMB-Si3N4 ceramic circuit board has characteristics of high thermal conductivity, high insulation, high heat capacity, and a thermal expansion coefficient that matches that of the chip. This board adopts a heavy copper of 100um (2.85oz) to ensure efficient current flow. It also employ thick gold, providing a reliable connection surface for components and protecting against oxidation and wear, extending the PCB's service life. This PCB is designed without a solder mask or silkscreen, offering maximum flexibility for customers with specific soldering or customization needs. It’s fabricated per IPC class -2 standards.

Basic Specifications

PCB size: 42mm x 41mm=1PCS

Layer count: single sided ceramic PCB

Thickness:0.25mm

Base material: 96% Si3N4 Ceramic Substrates

Surface finish: Gold plated

Thermal conductivity of dielectric: 80 W/MK

Copper weight: 100um (2.85oz)

Gold thickness: >=1um (39.37 micro-inch)

No solder mask or silkscreen

Technology: Active Metal Brazing (AMB)

Active Metal Brazing (AMB) Technology

The AMB (Active Metal Brazing) process is a method that utilizes a small amount of active elements contained in the brazing filler metal (for example, titanium Ti) to react with the ceramic, generating a reaction layer that can be soldered by the liquid brazing filler metal, thus achieving the bonding between the ceramic and the metal.

Si₃N₄ (silicon nitride) ceramic substrates

Si3N4 ceramic substrates are advanced materials renowned for their exceptional mechanical, thermal, and electrical properties, making them ideal for high-performance applications.

The ceramic substrates are fully customizable to meet specific customer requirements, including tailored ceramic thickness, copper layer thickness, and surface treatment options.

Their low coefficient of thermal expansion (CTE) ranges from 2.5 to 3.1ppm/K (40-400°C), closely matching silicon and other semiconductor materials, thereby minimizing thermal stress in electronic devices. The thermal conductivity of 80 W/(m·K) at 25°C ensures efficient heat dissipation, making them suitable for high-power and high-temperature environments.

Si3N4 ceramics boast an impressive bending strength of ≥700 MPa, providing exceptional mechanical strength and durability for demanding applications. It supports brazing of copper layers thicker than 0.8mm, reducing thermal resistance and enabling high current loads. This substrate also features selective Ag plating and sintered Ag processes, perfectly compatible with SiC chips for optimal performance.

Our PCB processing Capability

We can process precision circuits with a line width/space of 3mil/3mil and a conductor thickness of 0.5oz-14oz. We also has processing capabilities such as micro-via filling, the inorganic dam process, and 3D circuit fabrication.

We can handle different processing thicknesses, such as 0.25mm, 0.38mm, 0.5mm, 0.635mm, 1.0mm, 1.5mm, 2.0mm, 2.5mm, 3.0mm, etc.

We offer diversified surface treatments, including Electroplated gold process (1-30u"), Electroless Nickle Palladium Immersion gold process (1 - 5u"), Electroplate silver process (3 - 30um), Electroplated nickel process (3 - 10um), Immersion tin process (1 - 3um), etc