2inch 4inch GaN-based Blue Green LED Grown On Flat Or PPS Sapphire MOCVD DSP SSP

2inch 4inch GaN-on-Sapphire Blue/Green LED Wafer Flat or PPS Sapphire MOCVD DSP SSP

Description of  GaN-on-Sapphire Blue/Green LED Wafer:

GaN on Sapphire (GaN/Sapphire) wafers refers to a substrate material composed of a sapphire substrate with a layer of gallium nitride (GaN) grown on top. GaN is a semiconductor material that is used to manufacture high-power and high-frequency electronic devices, such as light-emitting diodes (LEDs), laser diodes, and high-electron-mobility transistors (HEMTs). Sapphire is a hard and durable material that is resistant to mechanical and thermal stress, making it a suitable substrate for the growth of GaN. GaN on Sapphire wafers are widely used in the manufacture of optoelectronic devices, microwave and millimeter-wave devices, and high-power electronic devices.

Structure of GaN-on-Sapphire Blue/Green LED Wafer:

Structure and Composition:

Gallium Nitride (GaN) Epitaxial Layer:

Single Crystal Thin Film: The GaN layer is a single crystal thin film, ensuring high purity and excellent crystalline quality. This characteristic is crucial for minimizing defects and dislocations, thereby enhancing the performance of devices manufactured on these templates.
Material Characteristics: GaN is renowned for its wide bandgap (3.4 eV), high electron mobility, and high thermal conductivity. These properties make it highly suitable for high-power and high-frequency applications, as well as devices operating in harsh environments.

Sapphire Substrate:

Mechanical Strength: Sapphire (Al2O3) is a robust material with exceptional mechanical strength, providing a stable and durable foundation for the GaN layer.
Thermal Stability: Sapphire exhibits excellent thermal performance, including high thermal conductivity and thermal stability, aiding in dissipating heat generated during device operation and maintaining device integrity at high temperatures.
Optical Transparency: Sapphire's transparency in the ultraviolet to infrared range makes it suitable for optoelectronic applications, where it can serve as a transparent substrate for emitting or detecting light.

Types of GaN Templates on Sapphire:

n-Type Gallium Nitride
p-Type
Semi-Insulating Type

Form of GaN-on-Sapphire Blue/Green LED Wafer:

Application Picture of  GaN-on-Sapphire Blue/Green LED Wafer:

Customization:

Micro LEDs are considered a key technology for the metaverse platform for enabling next-generation displays for augmented reality (AR), virtual reality (VR), mobile phones, and smart watches.
We can offers GaN based Red, green, blue, or UV LED Epitaxial Wafers as well as others. The substrate could be Sapphire,SiC,Silicon & Bulk GaN Substrate. the size is available from 2 inch to 4inch

Packing and Shipping:

FAQ:

1.Q:Why is GaN on sapphire?
   A: The use of sapphire substrates enables thinner GaN buffers, and simpler epitaxy structures, due to the higher-quality growth, relative to material grown on silicon. The sapphire substrate is also more electrically insulating than silicon, which should enable kiloVolt blocking capability.

2.Q: What are the advantages of GaN LED?
    A: Substantial energy cost savings. Traditional lighting systems, such as incandescent or fluorescent bulbs, are often energy-hungry and can contribute to increased energy expenditures. In contrast, GaN-based LED lighting is highly efficient and consumes far less power while delivering superior illumination.

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