SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | 1000pcs/week |
| Delivery Time | 2-4weeks |
| Packaging Details | foamed plastic＋carton |
| Material | Indium Arsenide (InAs) |
| Bandgap | 0.354 eV (direct bandgap at 300 K) |
| Electron Mobility | > 40,000 cm²/V·s (300 K), enabling high-speed electronic devices |
| Effective Mass | Electron effective mass: ~0.023 m₀ (free electron mass) |
| Lattice Constant | 6.058 Å, well-matched with materials like GaSb and InGaAs |
| Thermal Conductivity | ~0.27 W/cm·K at 300 K |
| Intrinsic Carrier Concentration | ~1.5 × 10¹⁶ cm⁻³ at 300 K |
| Refractive Index | ~3.51 (at 10 µm wavelength) |
| Brand Name | ZMSH |
| Model Number | Indium Arsenide (InAs) Substrate |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000pcs/week |
| Delivery Time | 2-4weeks | Packaging Details | foamed plastic＋carton |
| Material | Indium Arsenide (InAs) | Bandgap | 0.354 eV (direct bandgap at 300 K) |
| Electron Mobility | > 40,000 cm²/V·s (300 K), enabling high-speed electronic devices | Effective Mass | Electron effective mass: ~0.023 m₀ (free electron mass) |
| Lattice Constant | 6.058 Å, well-matched with materials like GaSb and InGaAs | Thermal Conductivity | ~0.27 W/cm·K at 300 K |
| Intrinsic Carrier Concentration | ~1.5 × 10¹⁶ cm⁻³ at 300 K | Refractive Index | ~3.51 (at 10 µm wavelength) |
| Brand Name | ZMSH | Model Number | Indium Arsenide (InAs) Substrate |
| Place of Origin | China | ||
| High Light | 5inch InAs Substrate ，6inch InAs Substrate ，4inch InAs Substrate | ||
Indium Arsenide (InAs) substrates are essential in the development of advanced semiconductor technologies, thanks to their unique combination of electrical and optical properties. As a III-V compound semiconductor, InAs is particularly valued for its narrow bandgap of 0.36 eV at room temperature, which allows it to operate effectively in the infrared spectrum. This makes InAs an ideal material for infrared photodetectors, where high sensitivity to infrared radiation is required. Additionally, its high electron mobility enables fast charge transport, making it crucial for high-speed electronics such as transistors and integrated circuits used in communication systems and high-frequency applications.
Moreover, InAs plays a key role in the emerging field of quantum technologies. Its properties allow the fabrication of quantum dots and other nanostructures, which are pivotal for the development of quantum devices, including qubits for quantum computing and quantum communication systems. The ability to integrate InAs with other materials such as InP and GaAs further enhances its versatility, leading to the creation of advanced heterostructures for optoelectronic devices like laser diodes and light-emitting diodes.
InAs has a direct bandgap of 0.354 eV at room temperature, which positions it as an excellent material for long-wavelength infrared (LWIR) detection. Its narrow bandgap enables high sensitivity in detecting low-energy photons, crucial for applications in thermal imaging and spectroscopy.
One of the standout properties of InAs is its exceptional electron mobility, exceeding 40,000 cm²/V•s at room temperature. This high mobility facilitates the development of high-speed and low-power electronic devices, such as high-electron-mobility transistors (HEMTs) and terahertz oscillators.
The low effective mass of electrons in InAs leads to high carrier mobility and reduced scattering, making it ideal for high-frequency applications and quantum transport studies.
InAs substrates exhibit good lattice matching with other III-V materials such as Gallium Antimonide (GaSb) and Indium Gallium Arsenide (InGaAs). This compatibility enables the fabrication of heterostructures and multi-junction devices, which are crucial for advanced optoelectronic applications.
InAs’s strong absorption and emission in the infrared spectrum make it an optimal material for photonic devices like lasers and detectors that operate in the 3-5 µm and 8-12 µm spectral regions.
| Property | Description |
| Bandgap | 0.354 eV (direct bandgap at 300 K) |
| Electron Mobility | > 40,000 cm²/V·s (300 K), enabling high-speed electronic devices |
| Effective Mass | Electron effective mass: ~0.023 m₀ (free electron mass) |
| Lattice Constant | 6.058 Å, well-matched with materials like GaSb and InGaAs |
| Thermal Conductivity | ~0.27 W/cm·K at 300 K |
| Intrinsic Carrier Concentration | ~1.5 × 10¹⁶ cm⁻³ at 300 K |
| Refractive Index | ~3.51 (at 10 µm wavelength) |
| Infrared Response | Sensitive to wavelengths in the 3–5 µm and 8–12 µm ranges |
| Crystal Structure | Zinc blende (face-centered cubic) |
| Mechanical Properties | Brittle and requires careful handling during processing |
| Thermal Expansion Coefficient | ~4.6 × 10⁻⁶ /K at 300 K |
| Melting Point | ~942 °C |
InAs substrates are primarily produced using techniques such as the Czochralski (CZ) method and Vertical Gradient Freeze (VGF) method. These methods ensure high-quality single crystals with minimal defects.
Czochralski Method: In this process, a seed crystal is dipped into a molten mixture of indium and arsenic. The seed is slowly pulled and rotated, allowing the crystal to grow layer by layer.
Vertical Gradient Freeze: This technique involves solidifying the molten material in a controlled thermal gradient, resulting in a uniform crystal structure with fewer dislocations.
Once the crystal is grown, it is sliced into wafers of the desired thickness using precision cutting tools. The wafers are then polished to achieve a mirror-like surface finish, essential for device fabrication. Chemical-mechanical polishing (CMP) is often employed to remove surface imperfections and enhance flatness.
Advanced characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), and Hall effect measurements, are used to ensure the structural, electrical, and optical quality of the substrates.
InAs substrates are extensively used in infrared photodetectors, particularly for thermal imaging and environmental monitoring. Their ability to detect long-wavelength infrared light makes them indispensable for applications in defense, astronomy, and industrial inspection.
InAs is a preferred material for quantum devices due to its low effective mass and high electron mobility. It is used in quantum wells and quantum dots for quantum computing, cryptography, and advanced photonic circuits.
The high electron mobility of InAs enables the development of high-speed transistors, including HEMTs and heterojunction bipolar transistors (HBTs). These devices are crucial for applications in wireless communication, radar systems, and high-frequency amplifiers.
InAs substrates are used in the fabrication of infrared lasers and light-emitting diodes (LEDs). These devices find applications in optical communication, remote sensing, and medical diagnostics.
InAs’s properties make it suitable for terahertz radiation sources and detectors. Terahertz technologies are increasingly used in security screening, non-destructive testing, and biomedical imaging.
A: 1.High Sensitivity: InAs-based devices exhibit excellent sensitivity to infrared light, making them ideal for low-light conditions.
2.Versatility: InAs substrates can be integrated with various III-V materials, enabling the design of versatile and high-performance devices.
3.Scalability: Advances in crystal growth techniques have made it possible to produce large-diameter InAs wafers, meeting the demands of modern semiconductor fabrication.
Tag:#InAs Substrate #Semiconductor Substrate
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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