Product Specification

Abstract​:Wafer Bonder​

The Wafer Bonder is a versatile solution for advanced semiconductor manufacturing, offering reliable direct bonding, anodic bonding, and thermocompression processes. Designed for high yield and repeatability, it supports 6- to 12-inch wafers with thickness flexibility, ensuring precise alignment and process stability for diverse applications like 3D IC packaging, MEMS devices, and power electronics.

Equipped with automated handling and intelligent monitoring, the system minimizes material waste and maximizes uptime. Its modular design allows quick adaptation to new processes, reducing operational complexity. Compliant with global industry standards, the bonder integrates seamlessly with existing production lines and MES systems, enhancing traceability and efficiency.

Backed by ISO-certified quality and responsive global service, this platform delivers long-term performance while optimizing cost-of-ownership for high-volume manufacturing.

Wafer Bonding Techniques​

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1. Room-Temperature Bonding​​

​​Principle​​:

• Achieves atomic-level bonding between substrates (e.g., Si, glass, polymers) at ambient temperatures (25–100°C) via surface activation (plasma/UV treatment).
• Relies on van der Waals forces or hydrogen bonds, requiring ultra-smooth surfaces (Ra < 0.5 nm).

​​Applications​​:

• Flexible electronics (OLEDs, foldable displays).
• Low-temperature MEMS (microscale sensors, biochips).
• Heterogeneous integration (III-V compounds on Si).

​​Advantages​​:

• No thermal stress or warping.
• Compatible with temperature-sensitive materials.

​​Limitations​​:

• Lower initial bond strength (may require post-annealing).
• High sensitivity to surface contamination.

2. Hydrophilic Bonding​​

​​Principle​​:

• Surfaces are treated with oxygen or nitrogen plasma to generate hydroxyl (-OH) groups.
• Bonds form via Si-O-Si covalent bonds under vacuum/controlled atmosphere (150–300°C).

​​Applications​​:

• Si-glass bonding (MEMS pressure sensors, optical packaging).
• 3D stacking of silicon dies (memory stacking).
• Biocompatible device fabrication (lab-on-a-chip).

​​Advantages​​:

• Low thermal budget (minimizes interfacial defects).
• Excellent planarity for large-area wafers.

​​Limitations​​:

• Humidity-sensitive (long-term stability risks).
• Requires precise plasma exposure control.

3. Temporary Bonding​​

​​Principle​​:

• Uses reversible adhesive layers (BCB, UV-curable resins) to attach wafers to carriers.
• Separation via laser lift-off, thermal slide, or chemical dissolution.

​​Applications​​:

• 3D packaging (thin-wafer handling, fan-out WLP).
• Backside processing (TSV filling, passivation).
• MEMS release (sacrificial layer etching).

​​Advantages​​:

• Preserves wafer flatness for downstream steps.
• Compatible with high-temperature post-bonding processes (>300°C).

​​Limitations​​:

• Risk of adhesive residue contamination.
• Separation may induce microcracks.

Applications

ZMSH Wafer Bonder

Frequently Asked Questions (FAQ)

​Q: Which bonding method is best for temperature-sensitive materials?​​
A: Room-temperature bonding​​ or ​​temporary bonding​​ are ideal for materials like polymers or organic electronics, as they avoid thermal stress.

Q: How does temporary bonding work?​​
A:A reversible adhesive layer (e.g., BCB or UV resin) bonds the wafer to a carrier. After processing, separation is done via ​​laser lift-off​​ or ​​thermal slide​​.

Q: Can I integrate bonding with existing lithography tools?​​
A: Yes, modular bonders can be integrated into fabs with ​​MES-compatible controls​​.