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Walton Electronics Co., Ltd.

  • China,Shenzhen
  • Active Member

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China MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16
China MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16

  1. China MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16

MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16

  1. MOQ: 10pcs
  2. Price: Pls contact us
  3. Get Latest Price
Payment Terms L/C, Western Union,palpay
Supply Ability 1000pcs/months
Delivery Time 2-3 workdays
Packaging Details standard
product name MT40A512M16HA-083E:A
Product Category DRAM
Mounting Style SMD/SMT
Package / Case FBGA-96
Memory Size 8 Gbit
Data Bus Width 16 bit
Brand Name original
Model Number MT40A512M16HA-083E:A
Certification ISO9001:2015standard
Place of Origin original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms L/C, Western Union,palpay Supply Ability 1000pcs/months
Delivery Time 2-3 workdays Packaging Details standard
product name MT40A512M16HA-083E:A Product Category DRAM
Mounting Style SMD/SMT Package / Case FBGA-96
Memory Size 8 Gbit Data Bus Width 16 bit
Brand Name original Model Number MT40A512M16HA-083E:A
Certification ISO9001:2015standard Place of Origin original
High Light MT40A512M16HA-083E ic dramflash memory ic FBGA-96ic dram 8 Gbit 512Mx16

MT40A512M16HA-083E:A Memory ICs DRAM SDRAM - DDR4 SMD/SMT Tray

 

• VDD = VDDQ = 1.2V ±60mV

• VPP = 2.5V, –125mV, +250mV

• On-die, internal, adjustable VREFDQ generation

• 1.2V pseudo open-drain I/O

• Refresh time of 8192-cycle at TC temperature range: – 64ms at -40°C to 85°C – 32ms at >85°C to 95°C – 16ms at >95°C to 105°C

• 16 internal banks (x4, x8): 4 groups of 4 banks each

• 8 internal banks (x16): 2 groups of 4 banks each

• 8n-bit prefetch architecture

• Programmable data strobe preambles

• Data strobe preamble training

• Command/Address latency (CAL)

• Multipurpose register READ and WRITE capability

• Write leveling • Self refresh mode

• Low-power auto self refresh (LPASR)

• Temperature controlled refresh (TCR)

• Fine granularity refresh

• Self refresh abort

• Maximum power saving

• Output driver calibration

• Nominal, park, and dynamic on-die termination (ODT)

• Data bus inversion (DBI) for data bus

• Command/Address (CA) parity

• Databus write cyclic redundancy check (CRC)

• Per-DRAM addressability

• Connectivity test

• JEDEC JESD-79-4 compliant

• sPPR and hPPR capability

 

 

Micron Technology
DRAM
RoHS: Details
SDRAM - DDR4
SMD/SMT
FBGA-96
16 bit
512 M x 16
8 Gbit
1.2 GHz
1.26 V
1.14 V
83 mA
0 C
+ 95 C
MT40A
Tray
Brand: Micron
Product Type: DRAM
1020
Subcategory: Memory & Data Storage

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Trading Company

  • Year Established:

    2004

  • Employee Number:

    50~100

  • Ecer Certification:

    Active Member

Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ... Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ...

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  • Walton Electronics Co., Ltd.
  • 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN
  • https://www.waltonele.com/

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