SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | In 30 days |
| Packaging Details | Customized Box |
| Material | HPSI 4h-Semi SIC |
| Grade | P |
| Diameter | 4'' |
| Thickness | 500±25μm |
| Orientation | <0001> |
| TTV | ≤5μm |
| BOW | -15μm~15μm |
| Warp | ≤10μm |
| Application | EPI Substrates |
| Brand Name | ZMSH |
| Model Number | HPSI 4h-semi SIC |
| Certification | ROHS |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Delivery Time | In 30 days |
| Packaging Details | Customized Box | Material | HPSI 4h-Semi SIC |
| Grade | P | Diameter | 4'' |
| Thickness | 500±25μm | Orientation | <0001> |
| TTV | ≤5μm | BOW | -15μm~15μm |
| Warp | ≤10μm | Application | EPI Substrates |
| Brand Name | ZMSH | Model Number | HPSI 4h-semi SIC |
| Certification | ROHS | Place of Origin | China |
| High Light | Semiconductor EPI Substrates ，High Purity SIC Wafers ，4H-Semi SiC Substrate | ||
1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are very ideal semiconductor materials.
2. Semi-insulated 4H-SiC sheet is prepared by high temperature pyrolysis, crystal growth and cutting process.
3. High-purity semi-insulated 4H-SiC sheets have lower carrier concentrations and higher insulation properties.
4. 4H-SiC is a hexagonal lattice. This crystal structure gives 4H-SiC excellent physical and electrical properties.
5. The process requires high purity of raw materials and precision to ensure the silicon wafer a consistent structure.
Features of HP 4H-semi SIC:
The high purity semi-insulated 4H-SiC (silicon carbide) sheet is an ideal semiconductor material:
1. Band gap width: Generally, 4H-SiC has a wide band gap width of about 3.26 electron volts (eV).
2. Due to its thermal stability and insulation properties, 4H-SiC can operate in a wide temperature range.
3. 4H-SiC has a high resistance to radiation used in nuclear energy and high energy physics experiments.
4. 4H-SiC has high hardness and mechanical strength, which makes it have excellent stability and reliability.
5. 4H-SiC has a high electron mobility in the range of 100-800 square centimeters /(volts · second) (cm^2/(V·s).
6. High thermal conductivity: 4H-SiC has a very high thermal conductivity, about 490-530 watts/m-kelle (W/(m·K).
7. High voltage resistance: 4H-SiC has excellent voltage resistance, making it suitable for high voltage applications.
Technical Parameters of HP 4H-semi SIC:
|
| Production | Research | Dummy |
| Type | 4H | 4H | 4H |
| Resistivity9(ohm·cm) | ≥1E9 | 100% area＞1E5 | 70% area＞1E5 |
| Diameter | 99.5~100mm | 99.5~100mm | 99.5~100mm |
| Thickness | 500±25μm | 500±25μm | 500±25μm |
| On-axis | <0001> | <0001> | <0001> |
| Off-axis | 0± 0.25° | 0± 0.25° | 0± 0.25° |
| Secondary flat length | 18± 1.5mm | 18± 1.5mm | 18± 1.5mm |
| TTV | ≤5μm | ≤10μm | ≤20μm |
| LTV | ≤2μm(5mm*5mm) | ≤5μm(5mm*5mm) | NA |
| Bow | -15μm~15μm | -35μm~35μm | -45μm~45μm |
| Warp | ≤20μm | ≤45μm | ≤50μm |
| Ra(5μm*5μm) | Ra≤0.2nm | Ra≤0.2nm | Ra≤0.2nm |
| Micropipe Density | ≤1ea/cm2 | ≤5ea/cm2 | ≤10ea/cm2 |
| Edge | Chamfer | Chamfer | Chamfer |
High purity semi-insulated 4H-SiC (silicon carbide) sheets are widely used in many fields:
1. Optoelectronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of optoelectronic devices.
2. Rf and microwave devices: The high electron mobility and low loss characteristics of semi-insulated 4H-SiC.
3. Other fields: Semi-insulated 4H-SiC also has some applications in other fields, such as irradiation detectors.
4. Due to the high thermal conductivity and excellent mechanical strength of 4H-semi SiC in extreme temperature.
5. Power electronic devices: Semi-insulated 4H-SiC is widely used in the manufacture of high-power power devices.
FAQ about HPSI 4H-semi SIC:
Q: What is the Brand Name of HPSI 4h-semi SIC?
A: The Brand Name of HPSI 4h-semi SIC is ZMSH.
Q: What is the Certification of HPSI 4h-semi SIC?
A: The Certification of HPSI 4h-semi SIC is ROHS.
Q: Where is the Place of Origin of HPSI 4h-semi SIC?
A: The Place of Origin of HPSI 4h-semi SIC is CHINA.
Q: What is the MOQ of HPSI 4h-semi SIC at one time?
A: The MOQ of HPSI 4h-semi SIC is 25pcs at one time.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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