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China factory - SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
  • Verified Supplier

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China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate

  1. China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
  2. China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
  3. China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
  4. China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
  5. China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate
  6. China 10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate

10x10x0.5mm HPSI 1sp 2sp 4H-SEMI SIC Silicon Carbide Wafersubstrate

  1. MOQ: 10pcs
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T, Western Union
Supply Ability 5000pcs/month
Delivery Time 2weeks
Packaging Details single wafer box
Material sic crystal
size 10x10mm
thickness 500um
surface CMP at si-face
color transparent
type un-doped
Brand Name ZMSH
Model Number 10X10X0.5mmt DSP
Certification ROHS
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union Supply Ability 5000pcs/month
Delivery Time 2weeks Packaging Details single wafer box
Material sic crystal size 10x10mm
thickness 500um surface CMP at si-face
color transparent type un-doped
Brand Name ZMSH Model Number 10X10X0.5mmt DSP
Certification ROHS Place of Origin CHINA
High Light 2sp silicon carbide waferHPSI silicon carbide wafer4H-SEMI silicon carbide substrate

High crystal quality for demanding power electronics

As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade  of 4H n -type silicon carbide (SiC) wafers.

Reliable and Ready

ZMSH offer device manufacturers a consistent, high quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the art physical vapor transport (PVT) growth techniques . Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.

Key features

  • Optimizes targeted performance and total cost of ownership for next generation power electronics devices
  • Large diameter wafers for improved economies of scale in semiconductor manufacturing
  • Range of tolerance levels to meet specific device fabrication needs
  • High crystal quality
  • Low defect densities

Sized for improved production

With the 150 mm wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.

Customized to meet your needs

Our SiC material can be customized to meet the performance and cost requirements of device design needs. We have the capability to produce high quality wafers for next generation devices with low defect densities as low as MPD ≤ 0.1 cm -2, TSD ≤ 400 cm- 2 and BPD ≤ 1,500 cm -2.

Learn more from our technical PDF on 150 mm Silicon Carbide Wafers

Specification
Property
4H-SiC, Single Crystal
6H-SiC, Single Crystal
Lattice Parameters
a=3.076 Å c=10.053 Å
a=3.073 Å c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Mohs Hardness
≈9.2
≈9.2
Density
3.21 g/cm3
3.21 g/cm3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index @750nm
no = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constant
c~9.66
c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)
a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
 
Thermal Conductivity (Semi-insulating)
a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap
3.23 eV
3.02 eV
Break-Down Electrical Field
3-5×106V/cm
3-5×106V/cm
Saturation Drift Velocity
2.0×105m/s
2.0×105m/s

Q: What's the way of shipping and cost?

(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express account, it's great.

Q: How to pay?

(1) T/T, PayPal, West Union, MoneyGram and
Assurance payment on and etc..
(2) Bank Fee: West Union≤USD1000.00),
T/T -: over 1000usd ,please by t/t

Q: What's the deliver time?

(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.

Q: Can I customize the products based on my need?

Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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