SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 5-10months |
| Purpose: | Sic diamond wire cutting machine |
| Equipment size: | 2500x2300x2500(L x W x H) |
| Processing material size range: | 4, 6, 8, 10, 12 inches of silicon carbide |
| Surface roughness: | Ra≤0.3u |
| Average cutting speed: | 0.3mm/min |
| Cutting and breaking rate: | ≤1%(except for human reasons, silicon material, line, maintenance and other reasons) |
| Brand Name | ZMSH |
| Model Number | Sic diamond wire cutting machine |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 5-10months |
| Purpose: | Sic diamond wire cutting machine | Equipment size: | 2500x2300x2500(L x W x H) |
| Processing material size range: | 4, 6, 8, 10, 12 inches of silicon carbide | Surface roughness: | Ra≤0.3u |
| Average cutting speed: | 0.3mm/min | Cutting and breaking rate: | ≤1%(except for human reasons, silicon material, line, maintenance and other reasons) |
| Brand Name | ZMSH | Model Number | Sic diamond wire cutting machine |
| Certification | rohs | Place of Origin | CHINA |
Silicon carbide cutter is a kind of equipment specially used for cutting silicon carbide (SiC) ingot, mainly used to divide large size silicon carbide ingot into smaller chunks or segments for subsequent processing. Silicon carbide as a kind of high hardness, high wear resistant material, its cutting needs special equipment and technology, silicon carbide cutter is designed for this efficient tool.
· High cutting efficiency: Using diamond cutting wheel or line saw, can quickly cut high hardness silicon carbide ingot.
· High stability: The equipment structure is stable, suitable for long-term continuous work.
· Low pollution: Use coolant to reduce dust and keep the working environment clean.
· Easy operation: Equipped with automatic control system, easy operation and high cutting precision.
| Specification | Details |
| Dimensions (L × W × H) | 2500x2300x2500 or customize |
| Processing material size range | 4, 6, 8, 10, 12 inches of silicon carbide |
| Surface roughness | Ra≤0.3u |
| Average cutting speed | 0.3mm/min |
| Weight | 5.5t |
| Cutting process setting steps | ≤30 steps |
| Equipment noise | ≤80 dB |
| Steel wire tension | 0~110N(0.25 wire tension is 45N) |
| Steel wire speed | 0~30m/S |
| Total power | 50kw |
| Diamond wire diameter | ≥0.18mm |
| End flatness | ≤0.05mm |
| Cutting and breaking rate | ≤1%(except for human reasons, silicon material, line, maintenance and other reasons) |
1. The two active cutting wheels of the cutting system are driven by motors to cut
High efficiency, good cutting quality;
2. Single machine to achieve multi-specification silicon carbide end processing and circular cutting function;
3. Device operation interface The device is simple and easy to operate;
4. Fully closed external protection, cutting process to avoid dust pollution, low noise.
The silicon carbide cutter can efficiently and accurately cut large size SiC ingot into standard crystal blocks, the cutting accuracy can reach ±0.1mm, and the section flatness is controlled within 5μm. This high-precision cutting ensures a 15-20% increase in material utilization during subsequent slicing operations, while reducing edge losses during wafer preparation. Using diamond wire saw technology, cutting loss is only 0.3-0.5mm, compared with the traditional cutting method to save more than 20% of raw material costs. The cut wafers can be directly used to prepare 4- to 8-inch SiC wafers to meet the demanding substrate material requirements of power semiconductor devices such as MOSFET and SBD.
We provide silicon carbide cutting machine sales, leasing and supporting technical services, including equipment selection guidance, process parameter optimization, operator training and after-sales maintenance support, while providing customized cutting solutions according to customer needs.
1. Q: What is the main working principle of silicon carbide induction growth furnace?
A: Silicon carbide induction growth furnace through electromagnetic induction heating or resistance heating, the temperature in the crucible rises to more than 2000 ° C, and forms an axial temperature gradient, thereby promoting the growth of silicon carbide crystals.
2. Q: What are the advantages of silicon carbide induction growth furnace in improving crystal quality?
A: Silicon carbide induction growth furnace has the characteristics of stable temperature field and good process repeatability, which can effectively avoid carbon pollution on the surface of silicon carbide seed crystals, thereby improving the quality and consistency of crystals.
Tag: #Silicon carbide diamond wire cutter, #SIC, #4/6/8/10/12 inch SIC#SIC Ingot, #6/8/12 inch Sic Ingot, #SIC boule, #Sic crystal growth
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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