SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T, Western Union |
| Supply Ability | 500pcs |
| Delivery Time | 2-4weeks |
| Packaging Details | single wafer package in 1000-grade cleaning room |
| Material | Indium arsenide (InAs) Monocrystalline crystal |
| growth method | vFG |
| SIZE | 2-4INCH |
| Thickness | 300-800um |
| application | III-V direct bandgap semiconductor material |
| surface | ssp/dsp |
| package | single wafer box |
| Brand Name | zmkj |
| Model Number | Indium arsenide (InAs) |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 500pcs |
| Delivery Time | 2-4weeks | Packaging Details | single wafer package in 1000-grade cleaning room |
| Material | Indium arsenide (InAs) Monocrystalline crystal | growth method | vFG |
| SIZE | 2-4INCH | Thickness | 300-800um |
| application | III-V direct bandgap semiconductor material | surface | ssp/dsp |
| package | single wafer box | Brand Name | zmkj |
| Model Number | Indium arsenide (InAs) | Place of Origin | CHINA |
| High Light | Monocrystal Semiconductor Substrate ，Single Crystal Indium Phosphide Wafer ，Semiconductor InAs Substrate | ||
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Indium arsenide InAs Substrate Single Crystal Monocrystal Semiconductor substrate
Single Crystal Semiconductor Substrate Indium Arsenide InAs wafer
Application
Indium Arsenide (InAs) single crystal semiconductor substrates are materials with unique properties, widely used in the electronics and optoelectronics fields. Here are some possible applications:
Due to its narrow bandgap, InAs substrates are ideal for manufacturing high-performance infrared detectors, particularly in the mid-infrared and long-wavelength infrared ranges. These detectors are essential in applications such as night vision, thermal imaging, and environmental monitoring.
InAs is used in the fabrication of quantum dots, which are critical for developing advanced optoelectronic devices like quantum dot lasers, quantum computing systems, and high-efficiency solar cells. Its superior electron mobility and quantum confinement effects make it a prime candidate for next-generation semiconductor devices.
InAs substrates offer excellent electron mobility, making them suitable for high-speed electronics, such as high-frequency transistors (HEMTs) and high-speed integrated circuits used in telecommunications and radar systems.
InAs is a popular material for fabricating optoelectronic devices, such as lasers and photodetectors, due to its direct bandgap and high electron mobility. These devices are critical for applications in fiber-optic communication, medical imaging, and spectroscopy.
InAs's superior thermoelectric properties make it a promising candidate for thermoelectric generators and coolers, which are used to convert temperature gradients into electrical energy and for cooling applications in electronics.
In summary, InAs substrates play a crucial role in advanced technologies ranging from infrared detection to quantum computing and high-speed electronics, making them indispensable in modern semiconductor and optoelectronic applications.
InAs substrate
| Product Name | Indium arsenide (InAs) crystal |
| Product Specifications | Growth method: CZ Crystal Orientation: <100> Conductive Type: N-type Doping type: undoped Carrier concentration: 2 ~ 5E16 / cm 3 |
| Standard Package | 1000 clean room, 100 clean bag or single box |
Growth | LEC |
Diameter | 2/2 inch |
Thickness | 500-625 um |
Orientation | <100> / <111> / <110> or others |
Off Orientation | Off 2° to 10° |
Surface | SSP/DSP |
Flat Options | EJ or SEMI. Std . |
TTV | <= 10 um |
EPD | <= 15000 cm-2 |
Grade | Epi polished grade / mechanical grade |
Package | Package |
Dopant available | S / Zn / Undoped |
Type of conductivity | N / P |
Concentration | 1E17 - 5E18 cm-3 |
Mobility | 100 ~ 25000 cm2 / v.s. |
InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single crystal as the substrate, and an infrared light-emitting device with a wavelength of 2 to 14 μm can be fabricated. The AlGaSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate. Mid-infrared quantum cascade laser. These infrared devices have good application prospects in the fields of gas monitoring, low-loss fiber communication, etc. In addition, InAs single crystals have high electron mobility and are ideal materials for making Hall devices.
Features:
1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical performance.
2, using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP) technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product processing
| crystal | dope | type | | mobility(cm2/V.s) | MPD(cm-2) | SIZE | |
| InAs | un-dope | N | 5*1016 | ³2*104 | <5*104 | Φ2″×0.5mm | |
| InAs | Sn | N | (5-20) *1017 | >2000 | <5*104 | Φ2″×0.5mm | |
| InAs | Zn | P | (1-20) *1017 | 100-300 | <5*104 | Φ2″×0.5mm | |
| InAs | S | N | (1-10)*1017 | >2000 | <5*104 | Φ2″×0.5mm | |
| size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized | ||||||
| ra | Surface roughness(Ra):<=5A | ||||||
| polish | single or doubles side polished | ||||||
| package | 100 grade cleaning plastic bag in 1000 cleaning room | ||||||
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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