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Shanghai GaNova Electronic Information Co., Ltd.

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Silicon Carbide Crystal

Manufacturer of a wide range of products which include Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System,150mm Rapid Thermal Annealing System With Three Sets Process Gases,Primary Flat Lengh 32.5mm Silicon Carbid...

Quality Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System for sale

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Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System

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Payment Terms T/T
Delivery Time 3 month
Maximum product size 8-inch and below wafers
Equipment dimensions 970mm x 1450mm x 2024mm (width x depth x height)
Heating temperature range Room temperature~~800 ℃ (thermocouple) 800 ℃~1250 ℃ (infrared pyrometer)
heating rate 150 ℃/s bare wafer 20 ℃/s silicon carbide carrier
Temperature uniformity < 500 ℃, uniformity ≤ ± 5 ℃ ≥ 500 ℃, uniformity ≤ ± 1%
Temperature control repeatability ±1℃
Constant temperature duration Programmable according to requirements
Brand Name Ganova
Model Number RTP-SA-8
Place of Origin China

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Quality 150mm Rapid Thermal Annealing System With Three Sets Process Gases for sale

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150mm Rapid Thermal Annealing System With Three Sets Process Gases

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Payment Terms T/T
Delivery Time 8-10week days
Product Name Rapid Thermal Annealing System
Model RTP-150RL
Maximum sample size 150mm
Process gases three sets
Software control system RL900
temperature control Tube power PID
Brand Name GaNova
Model Number JDEQ-0002
Place of Origin Suzhou China

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Quality Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4

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Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Diameter 100.0mm±0.5mm
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Model Number JDZJ01-001-001

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Quality 4H Politype Single Crystal Silicon Carbide 4

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4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Diameter 100.0mm±0.5mm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Model Number JDZJ01-001-001

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Quality 0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type for sale

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0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Model Number JDZJ01-001-001

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Quality 100.0mm Silicon Carbide Crystal 4

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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Diameter 100.0mm±0.5mm
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Model Number JDZJ01-001-001

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Quality 100.0mm Silicon Carbide Crystal 4

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100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Diameter 100.0mm±0.5mm
Carrier Type N-type
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Model Number JDZJ01-001-001

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Quality 4

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4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Model Number JDZJ01-001-001

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Quality JDZJ01-001-002 SiC Ingot Crystal 4

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JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Diameter 100.0mm±0.5mm
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 32.5mm±2.0mm
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Model Number JDZJ01-001-002

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Quality JDZJ01-001-004 SiC Ingot Crystal 6

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JDZJ01-001-004 SiC Ingot Crystal 6" P grade

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Delivery Time 3-4 week days
Packaging Details Packaged in a cleanroom in single seed container
Politype 4H
Diameter 150.0mm±0.5mm
Carrier Type N-type
Resistivity 0.015~0.028ohm.cm
Orientation 4.0°±0.2°
Primary Flat Orientation {10-10}±5.0°
Primary Flat Lengh 47.5mm±2.5mm
Secondary Flat Orientation Si-face:90°cw.from primary flat±5°
Model Number JDZJ01-001-004

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  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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