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China factory - Shanghai GaNova Electronic Information Co., Ltd.

Shanghai GaNova Electronic Information Co., Ltd.

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Sapphire Wafer

Manufacturer of a wide range of products which include Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System,150mm Rapid Thermal Annealing System With Three Sets Process Gases,50mm Sapphire Wafer R9 Mirror Polished E...

Quality Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System for sale

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Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System

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Payment Terms T/T
Delivery Time 3 month
Maximum product size 8-inch and below wafers
Equipment dimensions 970mm x 1450mm x 2024mm (width x depth x height)
Heating temperature range Room temperature~~800 ℃ (thermocouple) 800 ℃~1250 ℃ (infrared pyrometer)
heating rate 150 ℃/s bare wafer 20 ℃/s silicon carbide carrier
Temperature uniformity < 500 ℃, uniformity ≤ ± 5 ℃ ≥ 500 ℃, uniformity ≤ ± 1%
Temperature control repeatability ±1℃
Constant temperature duration Programmable according to requirements
Brand Name Ganova
Model Number RTP-SA-8
Place of Origin China

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Quality 150mm Rapid Thermal Annealing System With Three Sets Process Gases for sale

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150mm Rapid Thermal Annealing System With Three Sets Process Gases

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Payment Terms T/T
Delivery Time 8-10week days
Product Name Rapid Thermal Annealing System
Model RTP-150RL
Maximum sample size 150mm
Process gases three sets
Software control system RL900
temperature control Tube power PID
Brand Name GaNova
Model Number JDEQ-0002
Place of Origin Suzhou China

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Quality 50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type for sale

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50mm Sapphire Wafer R9 Mirror Polished EPI Ready Wafer Edge R Type

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Diameter 50.8 ±0.10
Surface Orientation A-Plane(11-20)
Laser mark As customer required
Wafer edge R-type
Material High purity Al₂O₃(>99.995%)
Thickness 430 ±15μm
Model Number JDCD08-001-001

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Quality Thk 430um Sapphire Substrate Crystal Orientation C/M0.2 for sale

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Thk 430um Sapphire Substrate Crystal Orientation C/M0.2

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation A-Plane(11-20)
Material High purity Al₂O₃(>99.995%)
Thickness 430±15μm
R-plane R9
Diameter 50.8 ±0.10
Wafer edge R-type
Model Number JDCD08-001-001

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Quality A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready for sale

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A Plane Surface Orientation Sapphire Wafer Mirror Polished EPI Ready

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation A-Plane(11-20)
Material High purity Al₂O₃(>99.995%)
Thickness 430 ±15μm
R-plane R9
Diameter 50.8 ±0.10
Wafer edge R-type
Model Number JDCD08-001-001

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Quality High Purity Al2O3 50mm Sapphire Substrate Wafer Thk 430μm for sale

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High Purity Al2O3 50mm Sapphire Substrate Wafer Thk 430μm

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation A-Plane(11-20)
Material High purity Al₂O₃(>99.995%)
Thickness 430±15μm
R-plane R9
Diameter 50.8 ±0.10
Wafer edge R-type
Model Number JDCD08-001-001

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Quality A Plane Sapphire Wafer Mirror Polished EPI Ready for sale

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A Plane Sapphire Wafer Mirror Polished EPI Ready

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name Sapphire Substrate Wafer
Surface Orientation A-Plane(11-20)
Material High purity Al₂O₃(>99.995%)
Thickness 430 ±10μm
R-plane R9
Diameter 50.8 ±0.10
Model Number JDCD08-001-002

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Quality EPI Ready Sapphire Substrate Wafer Edge R Type Mirror Polished for sale

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EPI Ready Sapphire Substrate Wafer Edge R Type Mirror Polished

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation A-Plane(11-20)
Material High purity Al2O3(>99.995%)
Thickness 430 ±10μm
R-plane R9
Diameter 50.8 ±0.10
Wafer edge R-type
Model Number JDCD08-001-001

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Quality Crystal Orientation C/M0.2 Sapphire Wafer Thk 440μm for sale

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Crystal Orientation C/M0.2 Sapphire Wafer Thk 440μm

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation A-Plane(11-20)
Material High purity Al₂O₃(>99.995%)
Thickness 430 ±10μm
R-plane R9
Diameter 50.8 ±0.10
Wafer edge R-type
Model Number JDCD08-001-001

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Quality A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip for sale

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A Plane Sapphire Substrate Wafer Thk 440um OF Length (mm) 16 LED Chip

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Payment Terms T/T
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Surface Orientation A-Plane(11-20)
Product Name 50mm Sapphire Substrate Wafer
Material High purity Al₂O₃(>99.995%)
Thickness 430±10μm
R-plane R9
Diameter 50.8 ±0.10
Model Number JDCD08-001-002

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  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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