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Shanghai GaNova Electronic Information Co., Ltd.

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GaN Epitaxial Wafer

Manufacturer of a wide range of products which include Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry,Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration,2inch GaN Epitaxial Wafer C Face...

Quality Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry for sale

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Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry

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Delivery Time 8-10week days
Feature easy to carry
Product Name Hall Effect Tester
Application carrier concentration
Brand JDEQ-0001
Performance stable
Industry semiconductor industry
Brand Name GaNova
Model Number JDEQ-0001
Place of Origin Suzhou China

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Quality Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration for sale

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Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration

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Delivery Time 8-10week days
Feature easy to carry
Product Name Hall Effect Tester
Application carrier concentration
Brand JDEQ-0001
Performance stable
Industry semiconductor industry
Brand Name GaNova
Model Number JDEQ-0001
Place of Origin Suzhou China

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Quality 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing for sale

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2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions 50.8 ± 1 mm
Product Name Free-standing GaN Substrates
Thickness 350 ±25µm
Orientation C plane (0001) off angle toward M-axis
TTV ≤ 15 μm
BoW ≤ 20 μm
Macro Defect Density 0cm⁻²
Brand Name GaNova
Model Number JDCD01-001-021
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices for sale

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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions 50.8 ± 1 mm
Thickness 350 ±25µm
BoW - 10µm ≤ BOW ≤ 10µm
Macro Defect Density 0cm⁻²
Useable Area > 90% (edge exclusion)
Product Name Free-standing GaN Substrates
National standards of China GB/T32282-2015
Brand Name GaNova
Model Number JDCD01-001-021
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 2 inch Free-standing SI-GaN Substrates for sale

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2 inch Free-standing SI-GaN Substrates

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Dimensions 50.8 ± 1 mm
Thickness 350 ±25µm
TTV ≤ 10µm
BoW ≤ 20 μm
Macro Defect Density 0cm⁻²
Useable Area > 90% (edge exclusion)
Product Name free-standing GaN Substrates
Dislocation Density From 1x 10⁵ to 3 x 10⁶cm⁻² (calculated by CL)*
Brand Name GaNova
Model Number JDCD01-001-021
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality Gallium Nitride Semiconductor Wafer 325um 375um C Plane for sale

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Gallium Nitride Semiconductor Wafer 325um 375um C Plane

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name GaN Single Crystal Substrate
Dimensions 50.8 ± 1 mm
Thickness 350 ±25µm
Orientation C plane (0001) off angle toward M-axis
TTV ≤ 10µm
BoW ≤ 20 μm
Macro Defect Density 0cm⁻²
Useable Area > 90% (edge exclusion)
Brand Name GaNova
Model Number JDCD01-001-021
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates for sale

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375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name 2-inch Free-standing U-GaN/SI-GaN Substrates
Dimensions 50.8 ± 1mm
Thickness 350 ± 25μm
Orientation flat (1-100) ± 0.5˚, 16 ± 1mm
Secondary orientation flat (11-20) ± 3˚, 8 ± 1mm
Ga face surface roughness < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy)
Brand Name GaNova
Model Number JDCD01-001-019
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 2 Inch U GaN Substrates SI GaN Substrates 50.8mm for sale

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2 Inch U GaN Substrates SI GaN Substrates 50.8mm

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name 2-inch Free-standing U-GaN/SI-GaN Substrates
Dimensions 50.8 ± 1mm
Thickness 350 ± 25μm
Orientation flat (1-100) ± 0.5˚, 16 ± 1mm
Secondary orientation flat (11-20) ± 3˚, 8 ± 1mm
Ga face surface roughness < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy)
Brand Name GaNova
Model Number JDCD01-001-019
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type for sale

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Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name 2-inch Free-standing U-GaN/SI-GaN Substrates
Dimensions 50.8 ± 1mm
Thickness 350 ± 25μm
Orientation flat (1-100) ± 0.5˚, 16 ± 1mm
Secondary orientation flat (11-20) ± 3˚, 8 ± 1mm
Ga face surface roughness < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy)
Brand Name GaNova
Model Number JDCD01-001-019
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing for sale

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50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

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Payment Terms T/T
Supply Ability 10000pcs/month
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name 2-inch Free-standing U-GaN/SI-GaN Substrates
Ga face surface roughness < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy)
Orientation flat (1-100) ± 0.5˚, 16 ± 1mm
Dimensions 50.8 ± 1mm
Thickness 350 ± 25μm
Secondary orientation flat (11-20) ± 3˚, 8 ± 1mm
Brand Name GaNova
Model Number JDCD01-001-019
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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