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Manufacturer of a wide range of products which include Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry,Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration,2inch GaN Epitaxial Wafer C Face...
MOQ: 1
Price:
Delivery Time | 8-10week days |
Feature | easy to carry |
Product Name | Hall Effect Tester |
Application | carrier concentration |
Brand | JDEQ-0001 |
Performance | stable |
Industry | semiconductor industry |
Brand Name | GaNova |
Model Number | JDEQ-0001 |
Place of Origin | Suzhou China |
MOQ: 1
Price:
Delivery Time | 8-10week days |
Feature | easy to carry |
Product Name | Hall Effect Tester |
Application | carrier concentration |
Brand | JDEQ-0001 |
Performance | stable |
Industry | semiconductor industry |
Brand Name | GaNova |
Model Number | JDEQ-0001 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Dimensions | 50.8 ± 1 mm |
Product Name | Free-standing GaN Substrates |
Thickness | 350 ±25µm |
Orientation | C plane (0001) off angle toward M-axis |
TTV | ≤ 15 μm |
BoW | ≤ 20 μm |
Macro Defect Density | 0cm⁻² |
Brand Name | GaNova |
Model Number | JDCD01-001-021 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Dimensions | 50.8 ± 1 mm |
Thickness | 350 ±25µm |
BoW | - 10µm ≤ BOW ≤ 10µm |
Macro Defect Density | 0cm⁻² |
Useable Area | > 90% (edge exclusion) |
Product Name | Free-standing GaN Substrates |
National standards of China | GB/T32282-2015 |
Brand Name | GaNova |
Model Number | JDCD01-001-021 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Dimensions | 50.8 ± 1 mm |
Thickness | 350 ±25µm |
TTV | ≤ 10µm |
BoW | ≤ 20 μm |
Macro Defect Density | 0cm⁻² |
Useable Area | > 90% (edge exclusion) |
Product Name | free-standing GaN Substrates |
Dislocation Density | From 1x 10⁵ to 3 x 10⁶cm⁻² (calculated by CL)* |
Brand Name | GaNova |
Model Number | JDCD01-001-021 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Product Name | GaN Single Crystal Substrate |
Dimensions | 50.8 ± 1 mm |
Thickness | 350 ±25µm |
Orientation | C plane (0001) off angle toward M-axis |
TTV | ≤ 10µm |
BoW | ≤ 20 μm |
Macro Defect Density | 0cm⁻² |
Useable Area | > 90% (edge exclusion) |
Brand Name | GaNova |
Model Number | JDCD01-001-021 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates |
Dimensions | 50.8 ± 1mm |
Thickness | 350 ± 25μm |
Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
Brand Name | GaNova |
Model Number | JDCD01-001-019 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates |
Dimensions | 50.8 ± 1mm |
Thickness | 350 ± 25μm |
Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
Brand Name | GaNova |
Model Number | JDCD01-001-019 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates |
Dimensions | 50.8 ± 1mm |
Thickness | 350 ± 25μm |
Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
Brand Name | GaNova |
Model Number | JDCD01-001-019 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
MOQ:
Price:
Payment Terms | T/T |
Supply Ability | 10000pcs/month |
Delivery Time | 3-4 week days |
Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers. |
Product Name | 2-inch Free-standing U-GaN/SI-GaN Substrates |
Ga face surface roughness | < 0.2nm (polished) or < 0.3nm (polished and surface treatment for epitaxy) |
Orientation flat | (1-100) ± 0.5˚, 16 ± 1mm |
Dimensions | 50.8 ± 1mm |
Thickness | 350 ± 25μm |
Secondary orientation flat | (11-20) ± 3˚, 8 ± 1mm |
Brand Name | GaNova |
Model Number | JDCD01-001-019 |
Certification | UKAS/ISO9001:2015 |
Place of Origin | Suzhou China |
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