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Shanghai GaNova Electronic Information Co., Ltd.

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SiC Epitaxial Wafer

Manufacturer of a wide range of products which include Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry,Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration,Beveling SiC Epitaxial Wafer 150...

Quality Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry for sale

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Carrier Concentration Hall Effect Sensor Tester Semiconductor Industry

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Delivery Time 8-10week days
Feature easy to carry
Product Name Hall Effect Tester
Application carrier concentration
Brand JDEQ-0001
Performance stable
Industry semiconductor industry
Brand Name GaNova
Model Number JDEQ-0001
Place of Origin Suzhou China

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Quality Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration for sale

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Semiconductor Materials Hall Effect Sensor Tester Carrier Concentration

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Delivery Time 8-10week days
Feature easy to carry
Product Name Hall Effect Tester
Application carrier concentration
Brand JDEQ-0001
Performance stable
Industry semiconductor industry
Brand Name GaNova
Model Number JDEQ-0001
Place of Origin Suzhou China

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Quality Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um for sale

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Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name SiC Epitaxial Wafer
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Polytype None Permitted
Orthogonal Misorientation ±5.0°
Wafer Edge Beveling
Primary Flat Length 47.5mm ± 1.5mm
Brand Name GaNova
Model Number JDCD03-002-007
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um for sale

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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name SiC Substrate
Crystal form 4H
Diameter 150.0mm+0mm/-0.2mm
Surface orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5mm ± 1.5mm
Secondary Flat Length No Secondary Flat
Brand Name GaNova
Model Number JDCD03-002-007
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um for sale

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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name SiC Epitaxial Wafer
Crystal Form 4H
Wafer Edge Beveling
Diameter 150.0mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5mm ± 1.5mm
Brand Name GaNova
Model Number JDCD03-002-007
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm for sale

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P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name Sic Epitaxial Wafer
Crystal form 4H
Diameter 150.0mm+0.0/-0.2mm
Surface orientation {0001}±0.2°
Length of main reference edge Notch
Length of secondary reference edge No sub-reference edges
Brand Name GaNova
Model Number JDCD03-002-005
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm for sale

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4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name SiC Epitaxial Wafer
Diameter 150.0mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5mm ± 1.5mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1°
Orthogonal Misorientation ±5.0°
Edge Exclusion 3mm
Brand Name GaNova
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China
Model Number JDCD03-002-008

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Quality 150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm for sale

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150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name Sic Epitaxial Wafer
Crystal form 4H
Diameter 150.0mm+0.0/-0.2mm
Surface orientation {0001}±0.2°
Length of main reference edge Notch
Length of secondary reference edge No sub-reference edges
Brand Name GaNova
Model Number JDCD03-002-006
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm for sale

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150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name SiC Epitaxial Wafer
Diameter 150.0mm +0mm/-0.2mm
Surface Orientation Off-Axis:4°toward <11-20>±0.5 °
Primary Flat Length 47.5mm ± 1.5mm
Secondary Flat Length No Secondary Flat
Primary Flat Orientation Parallel to<11-20>±1°
Orthogonal Misorientation ±5.0°
Edge Exclusion 3mm
Brand Name GaNova
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China
Model Number JDCD03-001-003

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Quality N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm for sale

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N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm

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Payment Terms T/T
Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers.
Product Name Sic Epitaxial Wafer
Crystal form 4H
Diameter 150.0mm+0.0/-0.2mm
Surface orientation {0001}±0.2°
Notch orientation <1-100>±1°
Notch angle 90° +5°/-1°
Brand Name GaNova
Model Number JDCD03-002-009
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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