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Shanghai GaNova Electronic Information Co., Ltd.

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Ga2O3 Wafer

Manufacturer of a wide range of products which include Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System,150mm Rapid Thermal Annealing System With Three Sets Process Gases,FWHM<350arcsec Ga2O3 Wafer Single Crysta...

Quality Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System for sale

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Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System

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Payment Terms T/T
Delivery Time 3 month
Maximum product size 8-inch and below wafers
Equipment dimensions 970mm x 1450mm x 2024mm (width x depth x height)
Heating temperature range Room temperature~~800 ℃ (thermocouple) 800 ℃~1250 ℃ (infrared pyrometer)
heating rate 150 ℃/s bare wafer 20 ℃/s silicon carbide carrier
Temperature uniformity < 500 ℃, uniformity ≤ ± 5 ℃ ≥ 500 ℃, uniformity ≤ ± 1%
Temperature control repeatability ±1℃
Constant temperature duration Programmable according to requirements
Brand Name Ganova
Model Number RTP-SA-8
Place of Origin China

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Quality 150mm Rapid Thermal Annealing System With Three Sets Process Gases for sale

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150mm Rapid Thermal Annealing System With Three Sets Process Gases

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Payment Terms T/T
Delivery Time 8-10week days
Product Name Rapid Thermal Annealing System
Model RTP-150RL
Maximum sample size 150mm
Process gases three sets
Software control system RL900
temperature control Tube power PID
Brand Name GaNova
Model Number JDEQ-0002
Place of Origin Suzhou China

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Quality FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm for sale

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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Thickness 0.6~0.8mm
Product Name Single Crystal Substrate
Orientation (010)
Polished surface Single side polished
FWHM <350arcsec
Ra ≤0.5nm
Brand Name GaNova
Model Number JDCD04-001-006
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm for sale

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Single Side Polished Ga2O3 Substrate Single Crystal Thickness 0.6mm 0.8mm

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Ra ≤0.5nm
Thickness 0.6~0.8mm
Product Name Single Crystal Substrate
Polished surface Single side polished
Orientation (010)
FWHM <350arcsec
Brand Name GaNova
Model Number JDCD04-001-006
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate for sale

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10x10mm Ga2O3 Wafer 10x15mm Single Crystal Substrate

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Orientation (010)(201)
Dimensions 10*10mm; 10*15mm
Product Name Single Crystal Substrate
Doping UID
FWHM <350arcsec
Ra ≤0.5nm
Brand Name GaNova
Model Number JDCD04-001-005
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality Semiconductor Single Crystal Gallium Oxide Substrate UID Doping for sale

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Semiconductor Single Crystal Gallium Oxide Substrate UID Doping

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Thickness 0.6~0.8mm
Product Name Single Crystal Substrate
Orientation (010)(201)
Doping UID
FWHM <350arcsec
Ra ≤0.5nm
Brand Name GaNova
Model Number JDCD04-001-005
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality 10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing for sale

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10x15mm2 UID Doped Free Standing Ga2O3 Wafer Single Polishing

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Thickness 0.6~0.8mm
Product Name Single Crystal Substrate
Orientation (010)(201)
FWHM <350arcsec
Ra ≤0.5nm
Dimensions 10*10mm; 10*15mm
Brand Name GaNova
Model Number JDCD04-001-005
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China

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Quality Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch for sale

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Ra 0.3nm Ga2O3 Single Crystal Epitaxial Wafer 2 Inch 4 Inch

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Product Name Single Crystal Substrate
Thickness 0.6~0.8mm
Orientation (201)
FWHM <350arcsec
Polished surface Single side polished
Ra ≤0.3nm
Brand Name GaNova
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China
Model Number JDCD04-001-001&002

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Quality Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2 for sale

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Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
Thickness 0.6~0.8mm
Product Name Single Crystal Substrate
Orientation (201)
Polished surface Single side polished
FWHM <350arcsec
Ra ≤0.3nm
Brand Name GaNova
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China
Model Number JDCD04-001-002

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Quality Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing for sale

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Ga2O3 Fe Doped Wafer Single Crystal Substrate 10x10mm2 Free Standing

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Delivery Time 3-4 week days
Packaging Details Vacuum packing in a class 10000 clean room environment,in cassettes of 6pcs or single wafer containers.
FWHM <350arcsec
Polished surface Single side polished
Thickness 0.6~0.8mm
Product Name Single Crystal Substrate
Ra ≤0.3nm
Package Packaged in a class 100 clean room environment, under a nitrogen atmosphere
Brand Name GaNova
Certification UKAS/ISO9001:2015
Place of Origin Suzhou China
Model Number JDCD04-001-001

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  • Shanghai GaNova Electronic Information Co., Ltd.
  • Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
  • https://www.epi-wafers.com/

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